Abstract
The efficacy of various non-diamond carbon films as precursors for diamond nucleation on unscratched silicon substrates was investigated with a conventional microwave plasma-enhanced chemical vapor deposition system. Silicon substrates were partially coated with various carbonaceous substances such as clusters consisting of a mixture of C60 and C70, evaporated films of carbon and pure C70, and hard carbon produced by a vacuum are deposition technique. For comparison, diamond nucleation on silicon substrates coated with submicrometer-sized diamond particles and uncoated smooth silicon surfaces was also examined under similar conditions. Except for evaporated carbon films, significantly higher diamond nucleation densities were obtained by subjecting the carbon-coated substrates to a low-temperature high-methane concentration hydrogen plasma treatment prior to diamond nucleation. The highest nucleation density (∼3 × 108 cm−2) was obtained with hard carbon films. Scanning electron microscopy and Raman spectroscopy demonstrated that the diamond nucleation density increased with the film thickness and etching resistance. The higher diamond nucleation density obtained with the vacuum are-deposited carbon films may be attributed to the inherent high etching resistance, presumably resulting from the high content of sp3 atomic bonds. Microscopy observations suggested that diamond nucleation in the presence of non-diamond carbon deposits resulted from carbon layers generated under the pretreatment conditions.
References
26
Referenced
31
10.1016/0079-6786(91)90002-H
10.1063/1.1142557
10.1063/1.354431
10.1016/0925-9635(91)90011-X
10.1016/0040-6090(92)90503-4
10.1557/JMR.1991.1491
{'key': 'S0884291400076603_ref004', 'volume-title': 'Applications of Diamond Films and Related Materials', 'author': 'Tzeng', 'year': '1991'}
/ Applications of Diamond Films and Related Materials by Tzeng (1991){'key': 'S0884291400076603_ref003', 'volume-title': 'The Properties of Diamond', 'author': 'Field', 'year': '1979'}
/ The Properties of Diamond by Field (1979)10.1126/science.247.4943.688
10.1063/1.107327
10.1063/1.108738
10.1557/JMR.1992.1144
10.1007/978-1-4684-5967-8_39
10.1016/0022-0248(81)90197-4
{'key': 'S0884291400076603_ref010', 'first-page': '395', 'volume-title': 'Applications of Diamond Films and Related Materials', 'author': 'Rudder', 'year': '1991'}
/ Applications of Diamond Films and Related Materials by Rudder (1991)10.1063/1.102106
10.1063/1.354636
10.1016/0925-9635(92)90107-Y
10.1557/JMR.1994.2148
10.1063/1.105678
10.1063/1.103688
10.1557/JMR.1989.0373
{'key': 'S0884291400076603_ref008', 'first-page': '122', 'volume': '89–1', 'author': 'Kobashi', 'year': '1989', 'journal-title': 'Extended Abstracts, Electrochem. Soc.'}
/ Extended Abstracts, Electrochem. Soc. by Kobashi (1989)10.1116/1.577029
10.1116/1.577031
10.1063/1.106541
Dates
Type | When |
---|---|
Created | 17 years, 11 months ago (Sept. 27, 2007, 8:23 a.m.) |
Deposited | 4 years, 6 months ago (Feb. 24, 2021, 4:53 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 10, 2024, 11 p.m.) |
Issued | 30 years, 7 months ago (Jan. 1, 1995) |
Published | 30 years, 7 months ago (Jan. 1, 1995) |
Published Online | 14 years, 5 months ago (March 3, 2011) |
Published Print | 30 years, 7 months ago (Jan. 1, 1995) |
@article{Feng_1995, title={Diamond nucleation on unscratched silicon substrates coated with various non-diamond carbon films by microwave plasma-enhanced chemical vapor deposition}, volume={10}, ISSN={2044-5326}, url={http://dx.doi.org/10.1557/jmr.1995.0165}, DOI={10.1557/jmr.1995.0165}, number={1}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Feng, Z. and Brewer, M.A. and Komvopoulos, K. and Brown, I.G. and Bogy, D.B.}, year={1995}, month=jan, pages={165–174} }