DOI: 10.1557/jmr.1993.2112. High-resolution electron microscopy of epitaxial YBCO/Y<sub>2</sub>O<sub>3</sub>/YSZ on Si(001)

High-resolution electron microscopy of epitaxial YBCO/Y2O3/YSZ on Si(001)

10.1557/jmr.1993.2112

Crossref journal-article

Springer Science and Business Media LLC

Journal of Materials Research (297)

Abstract

The microstructures of YBa2Cu3O7−δ (YBCO) thin films grown on Si with Y-stabilized ZrO2 (YSZ) and Y2O3 buffer layers were characterized by means of high-resolution electron microscopy. At the Si–YSZ interface, a 2.5 nm thick layer of regrown amorphous SiOx is present. The layer is interrupted by crystalline regions, typically 5 to 10 nm wide and 10 to 50 nm apart. Close to the crystalline regions, {111} defects are present in the Si substrate. The typical defect observed is an extrinsic stacking fault plus a perfect dislocation close to the stacking fault which terminates extra {111} planes in the upper part of the Si. These defects are probably formed by condensation of Si self-interstitials created during oxide regrowth. Precipitates are present in the Si close to the Si–YSZ interface and indicate that in-diffusion of Zr has occurred. The YSZ–Y2O3 interface is atomically sharp and essentially planar and contains no second phases. Perfect misfit dislocations with Burgers vector 1/2〈110〉 are present at this interface along with unrelaxed elastic misfit stresses. The Y2O3–YBCO interface is atomically sharp and planar, but contains steps. (001) stacking faults are present in the YBCO above these steps; the faults are, however, healed a few unit cells away from the interface. By HREM analysis of ultrathin specimen areas, the atomic layer of the YBCO closest to the Y2O3 was found to be a barium-oxygen layer.

Bibliography

Bardal, A., Eibl, O., MatthÃ©e, Th., Friedl, G., & Wecker, J. (1993). High-resolution electron microscopy of epitaxial YBCO/Y2O3/YSZ on Si(001). Journal of Materials Research, 8(9), 2112â2127.

Authors 5

A. Bardal (first)
O. Eibl (additional)
Th. Matthée (additional)
G. Friedl (additional)
J. Wecker (additional)

References 41 Referenced 43

10.1063/1.1663459
10.1016/0921-4534(92)90470-W
10.1063/1.105355
27 Bardal A. , Matthee Th. , and Wecker J. , unpublished research.
10.1063/1.342446
{'key': 'S0884291400071132_ref024', 'first-page': '17', 'volume-title': 'Aggregation Phenomena of Point Defects in Silicon', 'author': 'Gosele', 'year': '1983'} / Aggregation Phenomena of Point Defects in Silicon by Gosele (1983)
10.1063/1.94232
{'key': 'S0884291400071132_ref013', 'first-page': '107', 'volume-title': 'Layered Superconductors: Fabrication, Properties and Applications', 'volume': '275', 'author': 'Wecker', 'year': '1992'} / Layered Superconductors: Fabrication, Properties and Applications by Wecker (1992)
10.1016/0304-3991(89)90199-X
10.1063/1.92526
10.1063/1.89372 / Appl. Phys. Lett. by Nisse (1977)
10.1016/0921-4534(92)90438-I
{'key': 'S0884291400071132_ref026', 'first-page': '329', 'volume-title': 'VLSI Electronics: Microstructure Science', 'volume': '6', 'author': 'Nicolet', 'year': '1983'} / VLSI Electronics: Microstructure Science by Nicolet (1983)
10.1088/0022-3727/20/10/021
10.1016/B978-0-444-89353-6.50120-2
10.1063/1.104225
{'key': 'S0884291400071132_ref015', 'author': 'Bardal'} by Bardal
10.1063/1.341120
{'key': 'S0884291400071132_ref030', 'volume-title': 'Electron Microscopy of Thin Crystals', 'author': 'Hirsch', 'year': '1977'} / Electron Microscopy of Thin Crystals by Hirsch (1977)
10.1063/1.101562
10.1016/0921-4534(91)90302-F
10.1016/0921-4534(90)90376-P
10.1016/B978-0-444-89353-6.50101-9
10.1063/1.100557
10.1143/JJAP.29.L955
10.1016/0921-4534(90)90630-W
10.1063/1.103311
10.1063/1.107607
10.1063/1.103600
10.1063/1.104863
10.1063/1.108392
10.1063/1.348746
{'key': 'S0884291400071132_ref042', 'first-page': '363', 'volume-title': 'High Resolution Electron Microscopy of Defects in Materials', 'volume': '183', 'author': 'Streiffer', 'year': '1990'} / High Resolution Electron Microscopy of Defects in Materials by Streiffer (1990)
10.1016/B978-0-444-89353-6.50135-4
10.1063/1.107608
10.1063/1.90905 / Appl. Phys. Lett. by Nisse (1979)
10.1109/5.34127
10.1063/1.104864
10.1109/20.133894
{'key': 'S0884291400071132_ref019', 'volume-title': 'Theory of Dislocations', 'author': 'Hirth', 'year': '1968'} / Theory of Dislocations by Hirth (1968)
{'key': 'S0884291400071132_ref001', 'volume-title': 'Superconductivity Electronics', 'author': 'Hara', 'year': '1987'} / Superconductivity Electronics by Hara (1987)

Dates

Type	When
Created	17 years, 11 months ago (Sept. 27, 2007, 6:43 a.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 4:49 p.m.)
Indexed	1 year, 6 months ago (Feb. 11, 2024, 1:19 a.m.)
Issued	31 years, 11 months ago (Sept. 1, 1993)
Published	31 years, 11 months ago (Sept. 1, 1993)
Published Online	14 years, 5 months ago (March 3, 2011)
Published Print	31 years, 11 months ago (Sept. 1, 1993)

Funders 0

None

BibTeX

@article{Bardal_1993, title={High-resolution electron microscopy of epitaxial YBCO/Y2O3/YSZ on Si(001)}, volume={8}, ISSN={2044-5326}, url={http://dx.doi.org/10.1557/jmr.1993.2112}, DOI={10.1557/jmr.1993.2112}, number={9}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Bardal, A. and Eibl, O. and Matthée, Th. and Friedl, G. and Wecker, J.}, year={1993}, month=sep, pages={2112–2127} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        11
      ]
    ],
    "date-time": "2024-02-11T06:19:20Z",
    "timestamp": 1707632360551
  },
  "reference-count": 41,
  "publisher": "Springer Science and Business Media LLC",
  "issue": "9",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2011,
            3,
            3
          ]
        ],
        "date-time": "2011-03-03T00:00:00Z",
        "timestamp": 1299110400000
      },
      "content-version": "unspecified",
      "delay-in-days": 6392,
      "URL": "https://www.cambridge.org/core/terms"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1993,
        9
      ]
    ]
  },
  "abstract": "<jats:p>The microstructures of YBa<jats:sub>2</jats:sub>Cu<jats:sub>3</jats:sub>O<jats:sub>7\u2212\u03b4</jats:sub> (YBCO) thin films grown on Si with Y-stabilized ZrO<jats:sub>2</jats:sub> (YSZ) and Y<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> buffer layers were characterized by means of high-resolution electron microscopy. At the Si\u2013YSZ interface, a 2.5 nm thick layer of regrown amorphous SiO<jats:sub><jats:italic>x</jats:italic></jats:sub> is present. The layer is interrupted by crystalline regions, typically 5 to 10 nm wide and 10 to 50 nm apart. Close to the crystalline regions, {111} defects are present in the Si substrate. The typical defect observed is an extrinsic stacking fault plus a perfect dislocation close to the stacking fault which terminates extra {111} planes in the upper part of the Si. These defects are probably formed by condensation of Si self-interstitials created during oxide regrowth. Precipitates are present in the Si close to the Si\u2013YSZ interface and indicate that in-diffusion of Zr has occurred. The YSZ\u2013Y<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> interface is atomically sharp and essentially planar and contains no second phases. Perfect misfit dislocations with Burgers vector 1/2\u3008110\u3009 are present at this interface along with unrelaxed elastic misfit stresses. The Y<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>\u2013YBCO interface is atomically sharp and planar, but contains steps. (001) stacking faults are present in the YBCO above these steps; the faults are, however, healed a few unit cells away from the interface. By HREM analysis of ultrathin specimen areas, the atomic layer of the YBCO closest to the Y<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> was found to be a barium-oxygen layer.</jats:p>",
  "DOI": "10.1557/jmr.1993.2112",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2007,
        9,
        27
      ]
    ],
    "date-time": "2007-09-27T10:43:40Z",
    "timestamp": 1190889820000
  },
  "page": "2112-2127",
  "source": "Crossref",
  "is-referenced-by-count": 43,
  "title": "High-resolution electron microscopy of epitaxial YBCO/Y<sub>2</sub>O<sub>3</sub>/YSZ on Si(001)",
  "prefix": "10.1557",
  "volume": "8",
  "author": [
    {
      "given": "A.",
      "family": "Bardal",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "O.",
      "family": "Eibl",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Th.",
      "family": "Matth\u00e9e",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "G.",
      "family": "Friedl",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "J.",
      "family": "Wecker",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "297",
  "published-online": {
    "date-parts": [
      [
        2011,
        3,
        3
      ]
    ]
  },
  "reference": [
    {
      "key": "S0884291400071132_ref020",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.1663459"
    },
    {
      "key": "S0884291400071132_ref029",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0921-4534(92)90470-W"
    },
    {
      "key": "S0884291400071132_ref035",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.105355"
    },
    {
      "key": "S0884291400071132_ref028",
      "unstructured": "27 Bardal A. , Matthee Th. , and Wecker J. , unpublished research."
    },
    {
      "key": "S0884291400071132_ref017",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.342446"
    },
    {
      "key": "S0884291400071132_ref024",
      "first-page": "17",
      "volume-title": "Aggregation Phenomena of Point Defects in Silicon",
      "author": "Gosele",
      "year": "1983"
    },
    {
      "key": "S0884291400071132_ref025",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.94232"
    },
    {
      "key": "S0884291400071132_ref013",
      "first-page": "107",
      "volume-title": "Layered Superconductors: Fabrication, Properties and Applications",
      "volume": "275",
      "author": "Wecker",
      "year": "1992"
    },
    {
      "key": "S0884291400071132_ref018",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0304-3991(89)90199-X"
    },
    {
      "key": "S0884291400071132_ref021",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.92526"
    },
    {
      "key": "S0884291400071132_ref022",
      "doi-asserted-by": "crossref",
      "first-page": "290",
      "DOI": "10.1063/1.89372",
      "volume": "30",
      "author": "Nisse",
      "year": "1977",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "S0884291400071132_ref037",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0921-4534(92)90438-I"
    },
    {
      "key": "S0884291400071132_ref026",
      "first-page": "329",
      "volume-title": "VLSI Electronics: Microstructure Science",
      "volume": "6",
      "author": "Nicolet",
      "year": "1983"
    },
    {
      "key": "S0884291400071132_ref038",
      "doi-asserted-by": "publisher",
      "DOI": "10.1088/0022-3727/20/10/021"
    },
    {
      "key": "S0884291400071132_ref041",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/B978-0-444-89353-6.50120-2"
    },
    {
      "key": "S0884291400071132_ref004",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.104225"
    },
    {
      "key": "S0884291400071132_ref015",
      "author": "Bardal"
    },
    {
      "key": "S0884291400071132_ref016",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.341120"
    },
    {
      "key": "S0884291400071132_ref030",
      "volume-title": "Electron Microscopy of Thin Crystals",
      "author": "Hirsch",
      "year": "1977"
    },
    {
      "key": "S0884291400071132_ref031",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.101562"
    },
    {
      "key": "S0884291400071132_ref006",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0921-4534(91)90302-F"
    },
    {
      "key": "S0884291400071132_ref033",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0921-4534(90)90376-P"
    },
    {
      "key": "S0884291400071132_ref012",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/B978-0-444-89353-6.50101-9"
    },
    {
      "key": "S0884291400071132_ref005",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.100557"
    },
    {
      "key": "S0884291400071132_ref009",
      "doi-asserted-by": "publisher",
      "DOI": "10.1143/JJAP.29.L955"
    },
    {
      "key": "S0884291400071132_ref032",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0921-4534(90)90630-W"
    },
    {
      "key": "S0884291400071132_ref039",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.103311"
    },
    {
      "key": "S0884291400071132_ref010",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.107607"
    },
    {
      "key": "S0884291400071132_ref034",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.103600"
    },
    {
      "key": "S0884291400071132_ref007",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.104863"
    },
    {
      "key": "S0884291400071132_ref003",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.108392"
    },
    {
      "key": "S0884291400071132_ref008",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.348746"
    },
    {
      "key": "S0884291400071132_ref042",
      "first-page": "363",
      "volume-title": "High Resolution Electron Microscopy of Defects in Materials",
      "volume": "183",
      "author": "Streiffer",
      "year": "1990"
    },
    {
      "key": "S0884291400071132_ref040",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/B978-0-444-89353-6.50135-4"
    },
    {
      "key": "S0884291400071132_ref011",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.107608"
    },
    {
      "key": "S0884291400071132_ref023",
      "doi-asserted-by": "crossref",
      "first-page": "8",
      "DOI": "10.1063/1.90905",
      "volume": "35",
      "author": "Nisse",
      "year": "1979",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "S0884291400071132_ref002",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/5.34127"
    },
    {
      "key": "S0884291400071132_ref014",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.104864"
    },
    {
      "key": "S0884291400071132_ref036",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/20.133894"
    },
    {
      "key": "S0884291400071132_ref019",
      "volume-title": "Theory of Dislocations",
      "author": "Hirth",
      "year": "1968"
    },
    {
      "key": "S0884291400071132_ref001",
      "volume-title": "Superconductivity Electronics",
      "author": "Hara",
      "year": "1987"
    }
  ],
  "container-title": "Journal of Materials Research",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S0884291400071132",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2021,
        2,
        24
      ]
    ],
    "date-time": "2021-02-24T21:49:08Z",
    "timestamp": 1614203348000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "http://link.springer.com/10.1557/JMR.1993.2112"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1993,
        9
      ]
    ]
  },
  "references-count": 41,
  "journal-issue": {
    "issue": "9",
    "published-print": {
      "date-parts": [
        [
          1993,
          9
        ]
      ]
    }
  },
  "alternative-id": [
    "S0884291400071132"
  ],
  "URL": "http://dx.doi.org/10.1557/JMR.1993.2112",
  "relation": {},
  "ISSN": [
    "0884-2914",
    "2044-5326"
  ],
  "subject": [],
  "container-title-short": "J. Mater. Res.",
  "published": {
    "date-parts": [
      [
        1993,
        9
      ]
    ]
  }
}