DOI: 10.1557/jmr.1992.3260. Base electrodes for high dielectric constant oxide materials in silicon technology

Base electrodes for high dielectric constant oxide materials in silicon technology

10.1557/jmr.1992.3260

Crossref journal-article

Springer Science and Business Media LLC

Journal of Materials Research (297)

Abstract

Several conductive structures which appeared to be usable as base electrodes in VLSI capacitors based on high dielectric materials have been annealed in oxygen at 650 °C. The studied structures were Pt/TiN, Pt/Ta, Au/TiN, Ru, and RuO2/Ru, prepared under a variety of conditions. The structures have been studied by Rutherford backscattering (RBS) and Auger Electron Spectroscopy (AES). It was found that none of the pure metals, Pt, Au, or Ru, can prevent the diffusion of oxygen to the underlying layer and its oxidation, thus causing a possible break in the electrical conduction path to the silicon substrate. Of the investigated materials, in the thickness range ≤ 110 nm only the RuO2/Ru couple preserved its electrical connectivity to the Si substrate and prevented diffusion of silicon to the surface of the electrode.

Bibliography

Grill, A., Kane, W., Viggiano, J., Brady, M., & Laibowitz, R. (1992). Base electrodes for high dielectric constant oxide materials in silicon technology. Journal of Materials Research, 7(12), 3260â3265.

Authors 5

A. Grill (first)
W. Kane (additional)
J. Viggiano (additional)
M. Brady (additional)
R. Laibowitz (additional)

References 10 Referenced 85

{'key': 'S0884291400019129_ref003', 'volume': '91', 'author': 'Koyama', 'year': '1991', 'journal-title': 'IEEE IEDM'} / IEEE IEDM by Koyama (1991)
10.1016/0020-7225(91)90159-Z
{'key': 'S0884291400019129_ref002', 'volume': 'A 9', 'author': 'Haertling', 'year': '1991', 'journal-title': 'J. Vac. Sci. Technol'} / J. Vac. Sci. Technol by Haertling (1991)
{'key': 'S0884291400019129_ref004', 'author': 'Sayer', 'year': '1991', 'journal-title': "IEEE Ultrasonics '91 Symposium"} / IEEE Ultrasonics '91 Symposium by Sayer (1991)
{'key': 'S0884291400019129_ref005', 'volume': '116', 'author': 'Hren', 'year': '1991', 'journal-title': 'Ferroelectrics'} / Ferroelectrics by Hren (1991)
{'key': 'S0884291400019129_ref006', 'volume-title': 'Ferroelectric Thin Films II', 'volume': '243', 'author': 'Bruchhaus', 'year': '1991'} / Ferroelectric Thin Films II by Bruchhaus (1991)
10.1080/10584589208215568
10.1143/JJAP.30.2193
{'key': 'S0884291400019129_ref009', 'volume-title': 'Proc. 4th Int. Symp. on Integrated Ferroelectrics', 'author': 'Takemura', 'year': '1992'} / Proc. 4th Int. Symp. on Integrated Ferroelectrics by Takemura (1992)
{'key': 'S0884291400019129_ref010', 'volume': '26', 'author': 'Krusin-Elbaum', 'year': '1987', 'journal-title': 'Appl. Phys. Lett'} / Appl. Phys. Lett by Krusin-Elbaum (1987)

Dates

Type	When
Created	17 years, 10 months ago (Sept. 27, 2007, 6:41 a.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 4:45 p.m.)
Indexed	2 months, 1 week ago (June 16, 2025, 9:08 a.m.)
Issued	32 years, 8 months ago (Dec. 1, 1992)
Published	32 years, 8 months ago (Dec. 1, 1992)
Published Online	14 years, 6 months ago (Jan. 31, 2011)
Published Print	32 years, 8 months ago (Dec. 1, 1992)

Funders 0

None

BibTeX

@article{Grill_1992, title={Base electrodes for high dielectric constant oxide materials in silicon technology}, volume={7}, ISSN={2044-5326}, url={http://dx.doi.org/10.1557/jmr.1992.3260}, DOI={10.1557/jmr.1992.3260}, number={12}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Grill, A. and Kane, W. and Viggiano, J. and Brady, M. and Laibowitz, R.}, year={1992}, month=dec, pages={3260–3265} }

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