DOI: 10.1557/jmr.1991.0376. Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devices

Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devices

10.1557/jmr.1991.0376

Crossref journal-article

Springer Science and Business Media LLC

Journal of Materials Research (297)

Abstract

The reduction of dislocation density in heteroepitaxial III-V compound films on Si substrates has been studied using MOCVD (Metal-Organic Chemical Vapor Deposition). High-quality GaAs films on Si, with a dislocation density of about 106 cm−2, have been obtained by combining strained-layer superlattice insertion and thermal cycle annealing. Reduction of dislocation density in the III-V compounds on Si is discussed based on a simple model, where dislocation annihilation is assumed to be caused by dislocation movement under thermal and misfit stress. As a result of dislocation density reduction, high-efficiency GaAs-on-Si solar cells with total-area efficiencies of 18.3% (AM0) and 20% (AM1.5), and red and yellow emissions from InGaP-on-Si light-emitting diodes have been realized. Moreover, future prospects of heteroepitaxy of III-V compounds on Si are also discussed.

Bibliography

Yamaguchi, M. (1991). Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devices. Journal of Materials Research, 6(2), 376â384.

Authors 1

Masafumi Yamaguchi (first)

References 19 Referenced 100

10.1063/1.335737
10.1115/1.3171827
10.1063/1.331690
10.1063/1.96988
10.1063/1.100819
10.1143/JJAP.16.737
{'key': 'S0884291400012413_ref006', 'first-page': '141', 'volume-title': 'Heteroepitaxy on Silicon: Fundamentals, Structures, and Devices', 'volume': '116', 'author': 'Al-Jassim', 'year': '1988'} / Heteroepitaxy on Silicon: Fundamentals, Structures, and Devices by Al-Jassim (1988)
{'key': 'S0884291400012413_ref002', 'first-page': '285', 'volume-title': 'Heteroepitaxy on Silicon: Fundamentals, Structures, and Devices', 'volume': '116', 'author': 'Yamamoto', 'year': '1988'} / Heteroepitaxy on Silicon: Fundamentals, Structures, and Devices by Yamamoto (1988)
{'key': 'S0884291400012413_ref001', 'volume-title': 'Heteroepitaxy on Silicon II', 'volume': '91', 'author': 'Fan', 'year': '1987'} / Heteroepitaxy on Silicon II by Fan (1987)
10.1016/0022-0248(89)90391-6
10.1143/JJAP.23.L843
10.1016/0022-0248(89)90359-X
10.1063/1.101281
10.1063/1.102139
10.1063/1.100257
{'key': 'S0884291400012413_ref017', 'first-page': '873', 'volume-title': 'Proc. of 4th Int. Conf. on Photovoltaic Science and Engineering', 'author': 'Kadota', 'year': '1989'} / Proc. of 4th Int. Conf. on Photovoltaic Science and Engineering by Kadota (1989)
10.1063/1.339672
10.1143/JJAP.26.L1141 / Jpn. J. Appl. Phys. by Ishida (1987)
15 Tachikawa M. , Mori H. , and Yamaguchi M. (unpublished research).

Dates

Type	When
Created	17 years, 11 months ago (Sept. 27, 2007, 6:33 a.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 4:35 p.m.)
Indexed	3 months ago (June 3, 2025, 1:48 a.m.)
Issued	34 years, 7 months ago (Feb. 1, 1991)
Published	34 years, 7 months ago (Feb. 1, 1991)
Published Online	14 years, 7 months ago (Jan. 31, 2011)
Published Print	34 years, 7 months ago (Feb. 1, 1991)

Funders 0

None

BibTeX

@article{Yamaguchi_1991, title={Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devices}, volume={6}, ISSN={2044-5326}, url={http://dx.doi.org/10.1557/jmr.1991.0376}, DOI={10.1557/jmr.1991.0376}, number={2}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Yamaguchi, Masafumi}, year={1991}, month=feb, pages={376–384} }

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