DOI: 10.1557/jmr.1989.1057. Relaxation phenomena in evaporated amorphous silicon films

Relaxation phenomena in evaporated amorphous silicon films

10.1557/jmr.1989.1057

Crossref journal-article

Springer Science and Business Media LLC

Journal of Materials Research (297)

Abstract

Power compensated differential scanning calorimetry, transmission electron microscopy, and density measurements were used to characterize relaxation phenomena associated with structural transitions in electron beam evaporated amorphous silicon thin films. Two transitions were observed in the amorphous films upon heating: a broad exothermic process below 600 K and an endothermic step beginning at 600 K. The broad exothermic process is due to the relief of bond distortions. The endothermic step is related to homogenization and densification of the structure of the amorphous silicon.

Bibliography

De Avillez, R. R., Clevenger, L. A., & Thompson, C. V. (1989). Relaxation phenomena in evaporated amorphous silicon films. Journal of Materials Research, 4(5), 1057â1059.

Authors 3

R. R. De Avillez (first)
L. A. Clevenger (additional)
C. V. Thompson (additional)

References 13 Referenced 13

10.1016/0022-3093(88)90152-4
{'key': 'S0884291400005318_ref001', 'volume-title': 'Properties of Silicon', 'year': '1988'} / Properties of Silicon (1988)
10.1016/0038-1098(85)90947-0
10.1016/0022-3093(87)90048-2
10.1016/0022-3093(88)90151-2
10.1063/1.99644
10.1016/0022-3093(87)90011-1
10.1063/1.334406
10.1063/1.329209
10.1016/0022-3093(87)90038-X
{'key': 'S0884291400005318_ref006', 'volume-title': 'poster session, Symposium on Selected Topics in Electronic Materials, Materials Research Society 1988 Fall Meeting', 'author': 'Roorda', 'year': '1988'} / poster session, Symposium on Selected Topics in Electronic Materials, Materials Research Society 1988 Fall Meeting by Roorda (1988)
10.1016/0022-3093(88)90439-5
10.1016/0022-3093(88)90394-8

Dates

Type	When
Created	17 years, 10 months ago (Sept. 27, 2007, 5:37 a.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 4:26 p.m.)
Indexed	1 year, 6 months ago (Feb. 4, 2024, noon)
Issued	35 years, 10 months ago (Oct. 1, 1989)
Published	35 years, 10 months ago (Oct. 1, 1989)
Published Online	14 years, 6 months ago (Jan. 31, 2011)
Published Print	35 years, 10 months ago (Oct. 1, 1989)

Funders 0

None

BibTeX

@article{De_Avillez_1989, title={Relaxation phenomena in evaporated amorphous silicon films}, volume={4}, ISSN={2044-5326}, url={http://dx.doi.org/10.1557/jmr.1989.1057}, DOI={10.1557/jmr.1989.1057}, number={5}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={De Avillez, R. R. and Clevenger, L. A. and Thompson, C. V.}, year={1989}, month=oct, pages={1057–1059} }

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