DOI: 10.1557/jmr.1988.1208. Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in silicon

Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in silicon

10.1557/jmr.1988.1208

Crossref journal-article

Springer Science and Business Media LLC

Journal of Materials Research (297)

Abstract

The ion-bombardment-induced reversible movement of a planar amorphous/crystalline interface in silicon has been studied between 100 and 400 °C. The temperature dependence of the ion dose rate at which there is zero interface movement has an activation energy of 1.2 eV, the dissociation energy of divacancies. Scaling of this dose rate for different ion species exhibits a quadratic dependence on the density of displaced atoms in the collision cascade of individual ions, giving further evidence for divacancy control of the interface movement.

Bibliography

Linnros, J., Elliman, R. G., & Brown, W. L. (1988). Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in silicon. Journal of Materials Research, 3(6), 1208â1211.

Authors 3

J. Linnros (first)
R. G. Elliman (additional)
W. L. Brown (additional)

References 15 Referenced 140

10.1016/0029-554X(80)90440-1
10.1016/S0168-583X(87)80090-3
10.1080/00337576908235576
10.1080/00337577508239476
{'key': 'S0884291400003642_ref001', 'first-page': '141', 'volume-title': 'Laser—Solid Interactions and Transient Thermal Processing of Materials', 'volume': '13', 'author': 'Olson', 'year': '1983'} / Laser—Solid Interactions and Transient Thermal Processing of Materials by Olson (1983)
10.1080/00337577508239475
10.1016/0375-9601(79)90183-X
10.1063/1.93235
10.1103/PhysRevB.30.3629
10.1103/PhysRevLett.55.1482
{'key': 'S0884291400003642_ref009', 'first-page': '127', 'volume-title': 'Layered Structures, Epitaxy and Interfaces', 'volume': '37', 'author': 'Williams', 'year': '1985'} / Layered Structures, Epitaxy and Interfaces by Williams (1985)
10.1016/S0168-583X(87)80086-1
11 Linnros J. , Ph. D. thesis, Chalmers University of Technology, Göteborg, Sweden (1985).
{'key': 'S0884291400003642_ref015', 'first-page': '1', 'volume-title': 'Point Defects in Solids', 'author': 'Corbett', 'year': '1975'} / Point Defects in Solids by Corbett (1975)
10.1103/PhysRevB.32.2770

Dates

Type	When
Created	17 years, 11 months ago (Sept. 27, 2007, 9:45 a.m.)
Deposited	4 years, 6 months ago (Feb. 24, 2021, 4:42 p.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 12:25 p.m.)
Issued	36 years, 9 months ago (Dec. 1, 1988)
Published	36 years, 9 months ago (Dec. 1, 1988)
Published Online	14 years, 7 months ago (Jan. 31, 2011)
Published Print	36 years, 9 months ago (Dec. 1, 1988)

Funders 0

None

BibTeX

@article{Linnros_1988, title={Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in silicon}, volume={3}, ISSN={2044-5326}, url={http://dx.doi.org/10.1557/jmr.1988.1208}, DOI={10.1557/jmr.1988.1208}, number={6}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Linnros, J. and Elliman, R. G. and Brown, W. L.}, year={1988}, month=dec, pages={1208–1211} }

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