Abstract
A procedure based on the embedded atom method (EAM) is presented for developing atomistic models for use in computer simulation calculations, with an emphasis on simple but general schemes for matching experimental data with fitting parameters. Both the electron density function and the two-body potential are taken as exponentially decreasing functions and the model is derived for any choice of cutoff distance. The model has been applied successfully to seven fcc and three hcp metals, but the extension to bcc metals was unsuccessful because of difficulty in matching the shear anisotropy ratio.
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Dates
Type | When |
---|---|
Created | 17 years, 10 months ago (Sept. 27, 2007, 5:32 a.m.) |
Deposited | 4 years, 5 months ago (Feb. 24, 2021, 4:41 p.m.) |
Indexed | 1 month, 1 week ago (July 9, 2025, 6:54 p.m.) |
Issued | 37 years, 2 months ago (June 1, 1988) |
Published | 37 years, 2 months ago (June 1, 1988) |
Published Online | 14 years, 6 months ago (Jan. 31, 2011) |
Published Print | 37 years, 2 months ago (June 1, 1988) |
@article{Oh_1988, title={Simple embedded atom method model for fcc and hcp metals}, volume={3}, ISSN={2044-5326}, url={http://dx.doi.org/10.1557/jmr.1988.0471}, DOI={10.1557/jmr.1988.0471}, number={3}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Oh, D. J. and Johnson, R. A.}, year={1988}, month=jun, pages={471–478} }