DOI: 10.1209/epl/i1997-00540-7. Susceptibility of local magnetic moments in phosphorus-doped silicon near the metal-insulator transition

Susceptibility of local magnetic moments in phosphorus-doped silicon near the metal-insulator transition

10.1209/epl/i1997-00540-7

Crossref journal-article

IOP Publishing

Europhysics Letters (EPL) (266)

Bibliography

Schlager, H. G., & LÃ¶hneysen, H. v. (1997). Susceptibility of local magnetic moments in phosphorus-doped silicon near the metal-insulator transition. Europhysics Letters (EPL), 40(6), 661â666.

Authors 2

H. G Schlager (first)
H. v Löhneysen (additional)

References 30 Referenced 19

10.1103/RevModPhys.66.261
10.1103/PhysRevLett.48.1284
10.1103/PhysRevLett.71.2634
10.1103/PhysRevB.3.4232
10.1103/PhysRevB.10.2448
10.1143/JPSJ.50.3655
10.1103/PhysRevLett.59.578
10.1103/PhysRevB.37.5531
10.1103/PhysRevLett.63.648
10.1143/JPSJ.59.1801
10.1103/PhysRevB.50.17064
10.1103/PhysRevLett.70.3475
10.1063/1.329684
10.1103/PhysRevLett.48.344
10.1103/PhysRevLett.61.597
10.1103/PhysRevB.54.1435
{'key': '17', 'author': ''}
10.1149/1.2130006
{'key': '19', 'author': 'Schlager H. G.', 'year': '1996'} by Schlager H. G. (1996)
10.1103/PhysRevB.24.244
10.1103/PhysRevLett.33.1552
10.1103/PhysRevB.37.5522
10.1016/S0081-1947(08)60104-6 / Solid State Physics by Kohn W. (1957)
10.1143/JPSJ.62.1745
10.1103/PhysRevLett.68.3072
10.1103/PhysRevLett.69.1113
10.1002/andp.19955070106 / Ann. Phys. (Leipzig) by Langenfeld A. (1995)
10.1103/PhysRevLett.63.82
10.1103/PhysRevLett.71.3218
10.1103/PhysRevB.34.5935

Dates

Type	When
Created	21 years, 8 months ago (Dec. 19, 2003, 9:34 a.m.)
Deposited	5 years, 5 months ago (March 12, 2020, 11:54 a.m.)
Indexed	2 weeks, 2 days ago (Aug. 6, 2025, 8:27 a.m.)
Issued	27 years, 8 months ago (Dec. 15, 1997)
Published	27 years, 8 months ago (Dec. 15, 1997)
Published Online	18 years, 7 months ago (Jan. 2, 2007)
Published Print	27 years, 8 months ago (Dec. 15, 1997)

Funders 0

None

BibTeX

@article{Schlager_1997, title={Susceptibility of local magnetic moments in phosphorus-doped silicon near the metal-insulator transition}, volume={40}, ISSN={1286-4854}, url={http://dx.doi.org/10.1209/epl/i1997-00540-7}, DOI={10.1209/epl/i1997-00540-7}, number={6}, journal={Europhysics Letters (EPL)}, publisher={IOP Publishing}, author={Schlager, H. G and Löhneysen, H. v}, year={1997}, month=dec, pages={661–666} }

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