Abstract
A quantitative metal-semiconductor-metal (MSM) model and a Matlab based program have been developed and used to obtain parameters that are important for characterizing semiconductor nanowires (NWs), nanotubes (NTs) or nanoribbons (NRs). The use of the MSM model for quantitative analysis of nonlinear current–voltage curves of one-dimensional semiconducting nanostructures is illustrated by working through two examples, i.e., an amorphous carbon NT and a ZnO NW, and the obtained parameters include the carrier density, mobility, resistance of the NT(NW), and the heights of the two Schottky barriers formed at the interfaces between metal electrodes and semiconducting NT(NW).
Dates
Type | When |
---|---|
Created | 17 years, 6 months ago (Feb. 11, 2008, 6:15 p.m.) |
Deposited | 5 years, 4 months ago (April 16, 2020, 12:33 a.m.) |
Indexed | 3 months ago (June 4, 2025, 12:27 a.m.) |
Issued | 17 years, 8 months ago (Jan. 1, 2008) |
Published | 17 years, 8 months ago (Jan. 1, 2008) |
Published Print | 17 years, 8 months ago (Jan. 1, 2008) |
@article{Liu_2008, title={Quantitative Fitting of Nonlinear Current–Voltage Curves and Parameter Retrieval of Semiconducting Nanowire, Nanotube and Nanoribbon Devices}, volume={8}, ISSN={1533-4880}, url={http://dx.doi.org/10.1166/jnn.2008.n04}, DOI={10.1166/jnn.2008.n04}, number={1}, journal={Journal of Nanoscience and Nanotechnology}, publisher={American Scientific Publishers}, author={Liu, Y. and Zhang, Z. Y. and Hu, Y. F. and Jin, C. H. and Peng, L.-M.}, year={2008}, month=jan, pages={252–258} }