DOI: 10.1149/1.2426482. Impurity Redistribution in a Semiconductor during Thermal Oxidation

Impurity Redistribution in a Semiconductor during Thermal Oxidation

10.1149/1.2426482

Crossref journal-article

The Electrochemical Society

Journal of The Electrochemical Society (77)

Bibliography

Chen, W. H., & Chen, W. S. (1967). Impurity Redistribution in a Semiconductor during Thermal Oxidation. Journal of The Electrochemical Society, 114(12), 1297.

Authors 2

Wen H. Chen (first)
Wen S. Chen (additional)

References 0 Referenced 11

None

Dates

Type	When
Created	18 years, 6 months ago (Feb. 21, 2007, 4:35 p.m.)
Deposited	5 years, 7 months ago (Jan. 13, 2020, 9:02 a.m.)
Indexed	1 year, 7 months ago (Feb. 4, 2024, 3:05 p.m.)
Issued	58 years, 8 months ago (Jan. 1, 1967)
Published	58 years, 8 months ago (Jan. 1, 1967)
Published Print	58 years, 8 months ago (Jan. 1, 1967)

Funders 0

None

BibTeX

@article{Chen_1967, title={Impurity Redistribution in a Semiconductor during Thermal Oxidation}, volume={114}, ISSN={0013-4651}, url={http://dx.doi.org/10.1149/1.2426482}, DOI={10.1149/1.2426482}, number={12}, journal={Journal of The Electrochemical Society}, publisher={The Electrochemical Society}, author={Chen, Wen H. and Chen, Wen S.}, year={1967}, pages={1297} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        4
      ]
    ],
    "date-time": "2024-02-04T20:05:09Z",
    "timestamp": 1707077109881
  },
  "reference-count": 0,
  "publisher": "The Electrochemical Society",
  "issue": "12",
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1967
      ]
    ]
  },
  "DOI": "10.1149/1.2426482",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2007,
        2,
        21
      ]
    ],
    "date-time": "2007-02-21T21:35:20Z",
    "timestamp": 1172093720000
  },
  "page": "1297",
  "source": "Crossref",
  "is-referenced-by-count": 11,
  "title": "Impurity Redistribution in a Semiconductor during Thermal Oxidation",
  "prefix": "10.1149",
  "volume": "114",
  "author": [
    {
      "given": "Wen H.",
      "family": "Chen",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "Wen S.",
      "family": "Chen",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "77",
  "container-title": "Journal of The Electrochemical Society",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://syndication.highwire.org/content/doi/10.1149/1.2426482",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2020,
        1,
        13
      ]
    ],
    "date-time": "2020-01-13T14:02:32Z",
    "timestamp": 1578924152000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://iopscience.iop.org/article/10.1149/1.2426482"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1967
      ]
    ]
  },
  "references-count": 0,
  "journal-issue": {
    "issue": "12",
    "published-print": {
      "date-parts": [
        [
          1967
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1149/1.2426482",
  "relation": {},
  "ISSN": [
    "0013-4651"
  ],
  "subject": [],
  "container-title-short": "J. Electrochem. Soc.",
  "published": {
    "date-parts": [
      [
        1967
      ]
    ]
  }
}