DOI: 10.1149/1.2404451. Ion Implantation and Annealing Effects in SiO[sub 2] Layers on Silicon Studied by Optical Measurements

Ion Implantation and Annealing Effects in SiO[sub 2] Layers on Silicon Studied by Optical Measurements

10.1149/1.2404451

Crossref journal-article

The Electrochemical Society

Journal of The Electrochemical Society (77)

Bibliography

Fritzsche, C. R., & Rothemund, W. (1972). Ion Implantation and Annealing Effects in SiO[sub 2] Layers on Silicon Studied by Optical Measurements. Journal of The Electrochemical Society, 119(9), 1243.

Authors 2

C. R. Fritzsche (first)
W. Rothemund (additional)

References 0 Referenced 33

None

Dates

Type	When
Created	18 years, 6 months ago (Feb. 21, 2007, 4:53 p.m.)
Deposited	5 years, 7 months ago (Jan. 13, 2020, 8:50 a.m.)
Indexed	1 year, 5 months ago (March 12, 2024, 4:48 p.m.)
Issued	53 years, 8 months ago (Jan. 1, 1972)
Published	53 years, 8 months ago (Jan. 1, 1972)
Published Print	53 years, 8 months ago (Jan. 1, 1972)

Funders 0

None

BibTeX

@article{Fritzsche_1972, title={Ion Implantation and Annealing Effects in SiO[sub 2] Layers on Silicon Studied by Optical Measurements}, volume={119}, ISSN={0013-4651}, url={http://dx.doi.org/10.1149/1.2404451}, DOI={10.1149/1.2404451}, number={9}, journal={Journal of The Electrochemical Society}, publisher={The Electrochemical Society}, author={Fritzsche, C. R. and Rothemund, W.}, year={1972}, pages={1243} }

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