DOI: 10.1149/1.2129158. An Investigation of the Application of Porous Silicon Layers to the Dielectric Isolation of Integrated Circuits

An Investigation of the Application of Porous Silicon Layers to the Dielectric Isolation of Integrated Circuits

10.1149/1.2129158

Crossref journal-article

The Electrochemical Society

Journal of The Electrochemical Society (77)

Bibliography

Teng, T. C. (1979). An Investigation of the Application of Porous Silicon Layers to the Dielectric Isolation of Integrated Circuits. Journal of The Electrochemical Society, 126(5), 870â874.

Authors 1

T. C. Teng (first)

References 0 Referenced 6

None

Dates

Type	When
Created	19 years, 2 months ago (June 14, 2006, 4:57 p.m.)
Deposited	4 years, 11 months ago (Sept. 7, 2020, 11:46 a.m.)
Indexed	1 year, 7 months ago (Feb. 5, 2024, 9:23 a.m.)
Issued	46 years, 4 months ago (May 1, 1979)
Published	46 years, 4 months ago (May 1, 1979)
Published Online	5 years, 8 months ago (Dec. 9, 2019)
Published Print	46 years, 4 months ago (May 1, 1979)

Funders 0

None

BibTeX

@article{Teng_1979, title={An Investigation of the Application of Porous Silicon Layers to the Dielectric Isolation of Integrated Circuits}, volume={126}, ISSN={1945-7111}, url={http://dx.doi.org/10.1149/1.2129158}, DOI={10.1149/1.2129158}, number={5}, journal={Journal of The Electrochemical Society}, publisher={The Electrochemical Society}, author={Teng, T. C.}, year={1979}, month=may, pages={870–874} }

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