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The Electrochemical Society
Journal of The Electrochemical Society (77)
Bibliography

Wong, S. S., Sodini, C. G., Ekstedt, T. W., Grinolds, H. R., Jackson, K. H., Kwan, S. H., & Oldham, W. G. (1983). Low Pressure Nitrided‐Oxide as a Thin Gate Dielectric for MOSFET’s. Journal of The Electrochemical Society, 130(5), 1139–1144.

Authors 7
  1. S. S. Wong (first)
  2. C. G. Sodini (additional)
  3. T. W. Ekstedt (additional)
  4. H. R. Grinolds (additional)
  5. K. H. Jackson (additional)
  6. S. H. Kwan (additional)
  7. W. G. Oldham (additional)
References 0 Referenced 61

None

Dates
Type When
Created 19 years, 2 months ago (June 14, 2006, 3:01 p.m.)
Deposited 4 years, 11 months ago (Sept. 7, 2020, 12:48 p.m.)
Indexed 1 year, 1 month ago (July 5, 2024, 12:40 p.m.)
Issued 42 years, 3 months ago (May 1, 1983)
Published 42 years, 3 months ago (May 1, 1983)
Published Online 5 years, 8 months ago (Dec. 7, 2019)
Published Print 42 years, 3 months ago (May 1, 1983)
Funders 0

None

@article{Wong_1983, title={Low Pressure Nitrided‐Oxide as a Thin Gate Dielectric for MOSFET’s}, volume={130}, ISSN={1945-7111}, url={http://dx.doi.org/10.1149/1.2119904}, DOI={10.1149/1.2119904}, number={5}, journal={Journal of The Electrochemical Society}, publisher={The Electrochemical Society}, author={Wong, S. S. and Sodini, C. G. and Ekstedt, T. W. and Grinolds, H. R. and Jackson, K. H. and Kwan, S. H. and Oldham, W. G.}, year={1983}, month=may, pages={1139–1144} }