DOI: 10.1149/1.2115378. TEM Cross Section Sample Preparation Technique for III–V Compound Semiconductor Device Materials by Chemical Thinning

TEM Cross Section Sample Preparation Technique for III–V Compound Semiconductor Device Materials by Chemical Thinning

10.1149/1.2115378

Crossref journal-article

The Electrochemical Society

Journal of The Electrochemical Society (77)

Bibliography

Chu, S. N. G., & Sheng, T. T. (1984). TEM Cross Section Sample Preparation Technique for IIIâV Compound Semiconductor Device Materials by Chemical Thinning. Journal of The Electrochemical Society, 131(11), 2663â2667.

Authors 2

S. N. G. Chu (first)
T. T. Sheng (additional)

References 0 Referenced 53

None

Dates

Type	When
Created	19 years, 2 months ago (June 14, 2006, 2:51 p.m.)
Deposited	4 years, 11 months ago (Sept. 7, 2020, 12:51 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 12:02 p.m.)
Issued	40 years, 9 months ago (Nov. 1, 1984)
Published	40 years, 9 months ago (Nov. 1, 1984)
Published Online	5 years, 8 months ago (Dec. 7, 2019)
Published Print	40 years, 9 months ago (Nov. 1, 1984)

Funders 0

None

BibTeX

@article{Chu_1984, title={TEM Cross Section Sample Preparation Technique for III–V Compound Semiconductor Device Materials by Chemical Thinning}, volume={131}, ISSN={1945-7111}, url={http://dx.doi.org/10.1149/1.2115378}, DOI={10.1149/1.2115378}, number={11}, journal={Journal of The Electrochemical Society}, publisher={The Electrochemical Society}, author={Chu, S. N. G. and Sheng, T. T.}, year={1984}, month=nov, pages={2663–2667} }

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