DOI: 10.1149/1.2108999. Correlation Between Breakdown and Process‐Induced Positive Charge Trapping in Thin Thermal SiO2

Correlation Between Breakdown and Process‐Induced Positive Charge Trapping in Thin Thermal SiO2

10.1149/1.2108999

Crossref journal-article

The Electrochemical Society

Journal of The Electrochemical Society (77)

Bibliography

Holland, S., & Hu, C. (1986). Correlation Between Breakdown and ProcessâInduced Positive Charge Trapping in Thin Thermal SiO2. Journal of The Electrochemical Society, 133(8), 1705â1712.

Authors 2

S. Holland (first)
C. Hu (additional)

References 0 Referenced 66

None

Dates

Type	When
Created	19 years, 2 months ago (June 14, 2006, 2:36 p.m.)
Deposited	4 years, 11 months ago (Sept. 7, 2020, 1:07 p.m.)
Indexed	3 weeks, 2 days ago (Aug. 7, 2025, 4:28 p.m.)
Issued	39 years ago (Aug. 1, 1986)
Published	39 years ago (Aug. 1, 1986)
Published Online	5 years, 8 months ago (Dec. 7, 2019)
Published Print	39 years ago (Aug. 1, 1986)

Funders 0

None

BibTeX

@article{Holland_1986, title={Correlation Between Breakdown and Process‐Induced Positive Charge Trapping in Thin Thermal SiO2}, volume={133}, ISSN={1945-7111}, url={http://dx.doi.org/10.1149/1.2108999}, DOI={10.1149/1.2108999}, number={8}, journal={Journal of The Electrochemical Society}, publisher={The Electrochemical Society}, author={Holland, S. and Hu, C.}, year={1986}, month=aug, pages={1705–1712} }

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