DOI: 10.1149/1.2108358. The Effect of CMOS Processing on Oxygen Precipitation, Wafer Warpage, and Flatness

The Effect of CMOS Processing on Oxygen Precipitation, Wafer Warpage, and Flatness

10.1149/1.2108358

Crossref journal-article

The Electrochemical Society

Journal of The Electrochemical Society (77)

Bibliography

Lee, C., & Tobin, P. J. (1986). The Effect of CMOS Processing on Oxygen Precipitation, Wafer Warpage, and Flatness. Journal of The Electrochemical Society, 133(10), 2147â2152.

Authors 2

Chang‐Ou Lee (first)
P. J. Tobin (additional)

References 0 Referenced 17

None

Dates

Type	When
Created	19 years, 2 months ago (June 14, 2006, 2:36 p.m.)
Deposited	4 years, 11 months ago (Sept. 7, 2020, 1:02 p.m.)
Indexed	1 year, 7 months ago (Feb. 4, 2024, 9:48 a.m.)
Issued	38 years, 11 months ago (Oct. 1, 1986)
Published	38 years, 11 months ago (Oct. 1, 1986)
Published Online	5 years, 8 months ago (Dec. 7, 2019)
Published Print	38 years, 11 months ago (Oct. 1, 1986)

Funders 0

None

BibTeX

@article{Lee_1986, title={The Effect of CMOS Processing on Oxygen Precipitation, Wafer Warpage, and Flatness}, volume={133}, ISSN={1945-7111}, url={http://dx.doi.org/10.1149/1.2108358}, DOI={10.1149/1.2108358}, number={10}, journal={Journal of The Electrochemical Society}, publisher={The Electrochemical Society}, author={Lee, Chang‐Ou and Tobin, P. J.}, year={1986}, month=oct, pages={2147–2152} }

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