DOI: 10.1149/1.2069318. Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films: I .

Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films: I .

10.1149/1.2069318

Crossref journal-article

The Electrochemical Society

Journal of The Electrochemical Society (77)

Bibliography

Warren, W. L., Poindexter, E. H., Offenberg, M., & MÃ¼llerâWarmuth, W. (1992). Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films: I . Journal of The Electrochemical Society, 139(3), 872â880.

Authors 4

W. L. Warren (first)
E. H. Poindexter (additional)
M. Offenberg (additional)
W. Müller‐Warmuth (additional)

References 0 Referenced 95

None

Dates

Type	When
Created	19 years, 2 months ago (June 14, 2006, 4:25 p.m.)
Deposited	4 years, 11 months ago (Sept. 7, 2020, 2:15 p.m.)
Indexed	4 months, 2 weeks ago (April 21, 2025, 9:04 a.m.)
Issued	33 years, 6 months ago (March 1, 1992)
Published	33 years, 6 months ago (March 1, 1992)
Published Online	5 years, 8 months ago (Dec. 7, 2019)
Published Print	33 years, 6 months ago (March 1, 1992)

Funders 0

None

BibTeX

@article{Warren_1992, title={Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films: I .}, volume={139}, ISSN={1945-7111}, url={http://dx.doi.org/10.1149/1.2069318}, DOI={10.1149/1.2069318}, number={3}, journal={Journal of The Electrochemical Society}, publisher={The Electrochemical Society}, author={Warren, W. L. and Poindexter, E. H. and Offenberg, M. and Müller‐Warmuth, W.}, year={1992}, month=mar, pages={872–880} }

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