DOI: 10.1149/1.2050110. Formation of Ultrathin Nitrided SiO2 Oxides by Direct Nitrogen Implantation into Silicon

Formation of Ultrathin Nitrided SiO2 Oxides by Direct Nitrogen Implantation into Silicon

10.1149/1.2050110

Crossref journal-article

The Electrochemical Society

Journal of The Electrochemical Society (77)

Bibliography

Soleimani, H. R., Doyle, B. S., & Philipossian, A. (1995). Formation of Ultrathin Nitrided SiO2 Oxides by Direct Nitrogen Implantation into Silicon. Journal of The Electrochemical Society, 142(8), L132âL134.

Authors 3

H. R. Soleimani (first)
B. S. Doyle (additional)
A. Philipossian (additional)

References 0 Referenced 33

None

Dates

Type	When
Created	19 years, 2 months ago (June 14, 2006, 10:40 a.m.)
Deposited	4 years, 11 months ago (Sept. 7, 2020, 3:01 p.m.)
Indexed	2 months ago (June 24, 2025, 7:29 a.m.)
Issued	30 years ago (Aug. 1, 1995)
Published	30 years ago (Aug. 1, 1995)
Published Online	5 years, 8 months ago (Dec. 7, 2019)
Published Print	30 years ago (Aug. 1, 1995)

Funders 0

None

BibTeX

@article{Soleimani_1995, title={Formation of Ultrathin Nitrided SiO2 Oxides by Direct Nitrogen Implantation into Silicon}, volume={142}, ISSN={1945-7111}, url={http://dx.doi.org/10.1149/1.2050110}, DOI={10.1149/1.2050110}, number={8}, journal={Journal of The Electrochemical Society}, publisher={The Electrochemical Society}, author={Soleimani, H. R. and Doyle, B. S. and Philipossian, A.}, year={1995}, month=aug, pages={L132–L134} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        6,
        24
      ]
    ],
    "date-time": "2025-06-24T11:29:02Z",
    "timestamp": 1750764542656
  },
  "reference-count": 0,
  "publisher": "The Electrochemical Society",
  "issue": "8",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2019,
            12,
            7
          ]
        ],
        "date-time": "2019-12-07T00:00:00Z",
        "timestamp": 1575676800000
      },
      "content-version": "vor",
      "delay-in-days": 8894,
      "URL": "https://iopscience.iop.org/page/copyright"
    },
    {
      "start": {
        "date-parts": [
          [
            2019,
            12,
            7
          ]
        ],
        "date-time": "2019-12-07T00:00:00Z",
        "timestamp": 1575676800000
      },
      "content-version": "tdm",
      "delay-in-days": 8894,
      "URL": "https://iopscience.iop.org/info/page/text-and-data-mining"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1995,
        8,
        1
      ]
    ]
  },
  "DOI": "10.1149/1.2050110",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2006,
        6,
        14
      ]
    ],
    "date-time": "2006-06-14T14:40:22Z",
    "timestamp": 1150296022000
  },
  "page": "L132-L134",
  "source": "Crossref",
  "is-referenced-by-count": 33,
  "title": "Formation of Ultrathin Nitrided SiO2 Oxides by Direct Nitrogen Implantation into Silicon",
  "prefix": "10.1149",
  "volume": "142",
  "author": [
    {
      "given": "H. R.",
      "family": "Soleimani",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Digital Equipment Corporation, ULSI Operations Group, Hudson, Massachusetts, 01749, USA"
        }
      ]
    },
    {
      "given": "B. S.",
      "family": "Doyle",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Digital Equipment Corporation, ULSI Operations Group, Hudson, Massachusetts, 01749, USA"
        }
      ]
    },
    {
      "given": "A.",
      "family": "Philipossian",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Digital Equipment Corporation, ULSI Operations Group, Hudson, Massachusetts, 01749, USA"
        }
      ]
    }
  ],
  "member": "77",
  "published-online": {
    "date-parts": [
      [
        2019,
        12,
        7
      ]
    ]
  },
  "container-title": "Journal of The Electrochemical Society",
  "original-title": [],
  "link": [
    {
      "URL": "https://iopscience.iop.org/article/10.1149/1.2050110",
      "content-type": "text/html",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1149/1.2050110/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1149/1.2050110/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1149/1.2050110/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2020,
        9,
        7
      ]
    ],
    "date-time": "2020-09-07T19:01:34Z",
    "timestamp": 1599505294000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://iopscience.iop.org/article/10.1149/1.2050110"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1995,
        8,
        1
      ]
    ]
  },
  "references-count": 0,
  "journal-issue": {
    "issue": "8"
  },
  "URL": "http://dx.doi.org/10.1149/1.2050110",
  "relation": {},
  "ISSN": [
    "0013-4651",
    "1945-7111"
  ],
  "subject": [],
  "container-title-short": "J. Electrochem. Soc.",
  "published": {
    "date-parts": [
      [
        1995,
        8,
        1
      ]
    ]
  }
}