DOI: 10.1149/1.1836416. Investigations on High‐Temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers

Investigations on High‐Temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers

10.1149/1.1836416

Crossref journal-article

The Electrochemical Society

Journal of The Electrochemical Society (77)

Bibliography

Nakashima, S., Katayama, T., Miyamura, Y., Matsuzaki, A., Kataoka, M., Ebi, D., Imai, M., Izumi, K., & Ohwada, N. (1996). Investigations on HighâTemperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers. Journal of The Electrochemical Society, 143(1), 244â251.

Authors 9

S. Nakashima (first)
T. Katayama (additional)
Y. Miyamura (additional)
A. Matsuzaki (additional)
M. Kataoka (additional)
D. Ebi (additional)
M. Imai (additional)
K. Izumi (additional)
N. Ohwada (additional)

References 0 Referenced 54

None

Dates

Type	When
Created	19 years, 2 months ago (June 14, 2006, 10:22 a.m.)
Deposited	4 years, 11 months ago (Sept. 7, 2020, 3:03 p.m.)
Indexed	2 months ago (June 24, 2025, 7:29 a.m.)
Issued	29 years, 7 months ago (Jan. 1, 1996)
Published	29 years, 7 months ago (Jan. 1, 1996)
Published Online	5 years, 8 months ago (Dec. 7, 2019)
Published Print	29 years, 7 months ago (Jan. 1, 1996)

Funders 0

None

BibTeX

@article{Nakashima_1996, title={Investigations on High‐Temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers}, volume={143}, ISSN={1945-7111}, url={http://dx.doi.org/10.1149/1.1836416}, DOI={10.1149/1.1836416}, number={1}, journal={Journal of The Electrochemical Society}, publisher={The Electrochemical Society}, author={Nakashima, S. and Katayama, T. and Miyamura, Y. and Matsuzaki, A. and Kataoka, M. and Ebi, D. and Imai, M. and Izumi, K. and Ohwada, N.}, year={1996}, month=jan, pages={244–251} }

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