DOI: 10.1149/1.1570631. Stability of Ultrashallow Junction Formed by Low-Energy Boron Implant and Spike Annealing

Stability of Ultrashallow Junction Formed by Low-Energy Boron Implant and Spike Annealing

10.1149/1.1570631

Crossref journal-article

The Electrochemical Society

Electrochemical and Solid-State Letters (77)

Bibliography

Shao, L., Wang, X., Chen, H., Liu, J., Bennett, J., Larsen, L., & Chu, W.-K. (2003). Stability of Ultrashallow Junction Formed by Low-Energy Boron Implant and Spike Annealing. Electrochemical and Solid-State Letters, 6(6), G82.

Authors 7

Lin Shao (first)
Xuemei Wang (additional)
Hui Chen (additional)
Jiarui Liu (additional)
Joe Bennett (additional)
Larry Larsen (additional)
Wei-Kan Chu (additional)

References 22 Referenced 4

The National Technology Roadmap for Semiconductor Industry Association, San Jose, CA (1997).
H. R. Huff, G. A. Brown, and L. A. Larson, Papers 414 and 586 presented at The Electrochemical Society Meeting, Washington, DC, March 25-30, 2001.
{'key': '10.1149/1.1570631_r3', 'first-page': '125', 'volume': '4', 'author': 'Hofker', 'year': '1974', 'journal-title': 'Appl. Phys. Lett.', 'ISSN': 'http://id.crossref.org/issn/0003-6951', 'issn-type': 'print'} / Appl. Phys. Lett. by Hofker (1974)
10.1063/1.123872 / Appl. Phys. Lett. by Agarwal (1999)
J. D. Plummer, Paper presented at Ultra-Shallow Junctions Meeting 2001, Napa, CA, April 22-26, 2001.
10.1063/1.91450 / Appl. Phys. Lett. by Chu (1980)
R. B. Fair, in Impurity Doping Processing in Silicon , Chap. 7, F. F. Y. Wang, Editor, North-Holland, New York (1981).
10.1063/1.124855 / Appl. Phys. Lett. by Napolitani (1999)
10.1063/1.364452 / J. Appl. Phys. by Stolk (1997)
10.1103/PhysRevLett.82.4460 / Phys. Rev. Lett. by Cowern (1999)
{'key': '10.1149/1.1570631_r11', 'first-page': '501', 'volume': '1998', 'author': 'Dunham', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet.', 'ISSN': 'http://id.crossref.org/issn/0163-1918', 'issn-type': 'print'} / Tech. Dig. - Int. Electron Devices Meet. by Dunham
{'key': '10.1149/1.1570631_r12', 'first-page': '156', 'volume': '61', 'author': 'Barbier', 'year': '1987', 'journal-title': 'Appl. Phys. Lett.', 'ISSN': 'http://id.crossref.org/issn/0003-6951', 'issn-type': 'print'} / Appl. Phys. Lett. by Barbier (1987)
10.1063/1.104950 / Appl. Phys. Lett. by Mathiot (1991)
10.1080/00337578008209169 / Radiat. Eff. by Winterbon (1980)
10.1149/1.2085734 / J. Electrochem. Soc. by Giles (1991)
10.1016/0168-583X(91)95238-9 / Nucl. Instrum. Methods Phys. Res. B by Holland (1991)
10.1063/1.123530 / Appl. Phys. Lett. by Venezia (1999)
10.1149/1.1504903 / Electrochem. Solid-State Lett. by Shao (2002)
10.1063/1.1505672 / J. Appl. Phys. by Shao (2002)
10.1063/1.1361280 / Appl. Phys. Lett. by Shao (2001)
10.1063/1.1513207 / J. Appl. Phys. by Shao (2002)
W.-K. Chu, L. Shao, J. R. Liu, P. E. Thompson, X. M. Wang, and H. Chen, Paper presented at the 14th International Conference on Ion Implantation Technology, Taos, NM, Sept 22-27, 2002.

Dates

Type	When
Created	22 years, 4 months ago (April 17, 2003, 6:05 p.m.)
Deposited	5 years, 7 months ago (Jan. 16, 2020, 4:22 a.m.)
Indexed	1 year, 6 months ago (Feb. 3, 2024, 10:42 p.m.)
Issued	22 years, 7 months ago (Jan. 1, 2003)
Published	22 years, 7 months ago (Jan. 1, 2003)
Published Print	22 years, 7 months ago (Jan. 1, 2003)

Funders 0

None

BibTeX

@article{Shao_2003, title={Stability of Ultrashallow Junction Formed by Low-Energy Boron Implant and Spike Annealing}, volume={6}, ISSN={1099-0062}, url={http://dx.doi.org/10.1149/1.1570631}, DOI={10.1149/1.1570631}, number={6}, journal={Electrochemical and Solid-State Letters}, publisher={The Electrochemical Society}, author={Shao, Lin and Wang, Xuemei and Chen, Hui and Liu, Jiarui and Bennett, Joe and Larsen, Larry and Chu, Wei-Kan}, year={2003}, pages={G82} }

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