DOI: 10.1149/1.1392497. Grain Boundary Diffusion of Copper in Tantalum Nitride Thin Films

Grain Boundary Diffusion of Copper in Tantalum Nitride Thin Films

10.1149/1.1392497

Crossref journal-article

The Electrochemical Society

Journal of The Electrochemical Society (77)

Bibliography

Lin, J., & Lee, C. (1999). Grain Boundary Diffusion of Copper in Tantalum Nitride Thin Films. Journal of The Electrochemical Society, 146(9), 3466â3471.

Authors 2

Jing‐Cheng Lin (first)
Chiapyng Lee (additional)

References 0 Referenced 55

None

Dates

Type	When
Created	23 years, 1 month ago (July 28, 2002, 6:22 p.m.)
Deposited	4 years, 11 months ago (Sept. 7, 2020, 3:59 p.m.)
Indexed	1 year, 11 months ago (Sept. 9, 2023, 6:48 p.m.)
Issued	25 years, 11 months ago (Sept. 1, 1999)
Published	25 years, 11 months ago (Sept. 1, 1999)
Published Online	5 years, 8 months ago (Dec. 6, 2019)
Published Print	25 years, 11 months ago (Sept. 1, 1999)

Funders 0

None

BibTeX

@article{Lin_1999, title={Grain Boundary Diffusion of Copper in Tantalum Nitride Thin Films}, volume={146}, ISSN={1945-7111}, url={http://dx.doi.org/10.1149/1.1392497}, DOI={10.1149/1.1392497}, number={9}, journal={Journal of The Electrochemical Society}, publisher={The Electrochemical Society}, author={Lin, Jing‐Cheng and Lee, Chiapyng}, year={1999}, month=sep, pages={3466–3471} }

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