DOI: 10.1147/rd.95.0375. Observations of “Clean” Surfaces of Si, Ge, and GaAs by Low-Energy Electron Diffraction

Observations of “Clean” Surfaces of Si, Ge, and GaAs by Low-Energy Electron Diffraction

10.1147/rd.95.0375

Crossref journal-article

IBM

IBM Journal of Research and Development (3082)

Bibliography

Jona, F. (1965). Observations of âCleanâ Surfaces of Si, Ge, and GaAs by Low-Energy Electron Diffraction. IBM Journal of Research and Development, 9(5), 375â387.

Authors 1

F. Jona (first)

References 0 Referenced 204

None

Dates

Type	When
Created	15 years, 4 months ago (April 5, 2010, 10:34 a.m.)
Deposited	7 years, 9 months ago (Nov. 13, 2017, 10:23 p.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 11 a.m.)
Issued	59 years, 11 months ago (Sept. 1, 1965)
Published	59 years, 11 months ago (Sept. 1, 1965)
Published Print	59 years, 11 months ago (Sept. 1, 1965)

Funders 0

None

BibTeX

@article{Jona_1965, title={Observations of “Clean” Surfaces of Si, Ge, and GaAs by Low-Energy Electron Diffraction}, volume={9}, ISSN={0018-8646}, url={http://dx.doi.org/10.1147/rd.95.0375}, DOI={10.1147/rd.95.0375}, number={5}, journal={IBM Journal of Research and Development}, publisher={IBM}, author={Jona, F.}, year={1965}, month=sep, pages={375–387} }

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