DOI: 10.1147/rd.433.0245. Scaling the gate dielectric: Materials, integration, and reliability

Scaling the gate dielectric: Materials, integration, and reliability

10.1147/rd.433.0245

Crossref journal-article

IBM

IBM Journal of Research and Development (3082)

Bibliography

Buchanan, D. A. (1999). Scaling the gate dielectric: Materials, integration, and reliability. IBM Journal of Research and Development, 43(3), 245â264.

Authors 1

D. A. Buchanan (first)

References 0 Referenced 309

None

Dates

Type	When
Created	15 years, 4 months ago (April 5, 2010, 10:34 a.m.)
Deposited	7 years, 9 months ago (Nov. 13, 2017, 11:16 p.m.)
Indexed	3 weeks, 2 days ago (Aug. 7, 2025, 4:58 a.m.)
Issued	26 years, 3 months ago (May 1, 1999)
Published	26 years, 3 months ago (May 1, 1999)
Published Print	26 years, 3 months ago (May 1, 1999)

Funders 0

None

BibTeX

@article{Buchanan_1999, title={Scaling the gate dielectric: Materials, integration, and reliability}, volume={43}, ISSN={0018-8646}, url={http://dx.doi.org/10.1147/rd.433.0245}, DOI={10.1147/rd.433.0245}, number={3}, journal={IBM Journal of Research and Development}, publisher={IBM}, author={Buchanan, D. A.}, year={1999}, month=may, pages={245–264} }

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