Abstract
▪ Abstract Experimental and computational studies of photophysical processes in silver halide imaging materials are presented. Recent investigations that have refined our understanding of carrier recombination paths, exciton behavior, quantum confinement effects, and the structure and function of small surface silver clusters are detailed. The theory and mechanism of electron and hole injection from photoexcited surface-adsorbed dye molecules are outlined. The carrier trapping properties and subsequent photophysics of transition-metal dopant complexes are presented. Particular emphasis is given to the role of relaxation processes in electron and hole trapping events.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 27, 2002, 7:46 a.m.) |
Deposited | 1 year, 7 months ago (Jan. 6, 2024, 12:10 a.m.) |
Indexed | 1 year ago (July 30, 2024, 2:34 p.m.) |
Issued | 25 years, 10 months ago (Oct. 1, 1999) |
Published | 25 years, 10 months ago (Oct. 1, 1999) |
Published Print | 25 years, 10 months ago (Oct. 1, 1999) |
@article{Eachus_1999, title={T<scp>HE</scp>P<scp>HOTOPHYSICS OF</scp>S<scp>ILVER</scp>H<scp>ALIDE</scp>I<scp>MAGING</scp>M<scp>ATERIALS</scp>}, volume={50}, ISSN={1545-1593}, url={http://dx.doi.org/10.1146/annurev.physchem.50.1.117}, DOI={10.1146/annurev.physchem.50.1.117}, number={1}, journal={Annual Review of Physical Chemistry}, publisher={Annual Reviews}, author={Eachus, Raymond S. and Marchetti, Alfred P. and Muenter, Annabel A.}, year={1999}, month=oct, pages={117–144} }