10.1146/annurev.matsci.32.112001.132041
Crossref journal-article
Annual Reviews
Annual Review of Materials Research (22)
Abstract

▪ Abstract  The phase-field method has recently emerged as a powerful computational approach to modeling and predicting mesoscale morphological and microstructure evolution in materials. It describes a microstructure using a set of conserved and nonconserved field variables that are continuous across the interfacial regions. The temporal and spatial evolution of the field variables is governed by the Cahn-Hilliard nonlinear diffusion equation and the Allen-Cahn relaxation equation. With the fundamental thermodynamic and kinetic information as the input, the phase-field method is able to predict the evolution of arbitrary morphologies and complex microstructures without explicitly tracking the positions of interfaces. This paper briefly reviews the recent advances in developing phase-field models for various materials processes including solidification, solid-state structural phase transformations, grain growth and coarsening, domain evolution in thin films, pattern formation on surfaces, dislocation microstructures, crack propagation, and electromigration.

Bibliography

Chen, L.-Q. (2002). Phase-Field Models for Microstructure Evolution. Annual Review of Materials Research, 32(1), 113–140.

Authors 1
  1. Long-Qing Chen (first)
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Dates
Type When
Created 23 years ago (July 28, 2002, 7:12 p.m.)
Deposited 1 year, 7 months ago (Jan. 6, 2024, 1:44 p.m.)
Indexed 7 hours, 40 minutes ago (Aug. 23, 2025, 12:59 a.m.)
Issued 23 years ago (Aug. 1, 2002)
Published 23 years ago (Aug. 1, 2002)
Published Print 23 years ago (Aug. 1, 2002)
Funders 0

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@article{Chen_2002, title={Phase-Field Models for Microstructure Evolution}, volume={32}, ISSN={1545-4118}, url={http://dx.doi.org/10.1146/annurev.matsci.32.112001.132041}, DOI={10.1146/annurev.matsci.32.112001.132041}, number={1}, journal={Annual Review of Materials Research}, publisher={Annual Reviews}, author={Chen, Long-Qing}, year={2002}, month=aug, pages={113–140} }