DOI: 10.1143/jpsj.15.2360. Indirect Transition in Narrow Junction of Ge

Indirect Transition in Narrow Junction of Ge–Si Alloy

10.1143/jpsj.15.2360

Crossref journal-article

Physical Society of Japan

Journal of the Physical Society of Japan (4365)

Bibliography

Ando, K. (1960). Indirect Transition in Narrow Junction of GeâSi Alloy. Journal of the Physical Society of Japan, 15(12), 2360â2360.

Authors 1

Kei-ichi Ando (first)

References 5 Referenced 3

10.1103/PhysRevLett.2.258 / Phys. Rev. Letter by Brockhouse B. N. (1959)
10.1016/0038-1101(60)90052-6 / Solid State Electronics by Esaki L. (1960)
10.1103/PhysRevLett.3.167 / Phys. Rev. Letter by Holonyak N. (1959)
10.1016/0022-3697(59)90372-5 / Phys. Chem. Solids by Macfarlane G. G. (1959)
10.1103/PhysRev.109.695 / Phys. Rev. by Braunstein R. (1958)

Dates

Type	When
Created	20 years, 1 month ago (July 20, 2005, 8:42 a.m.)
Deposited	3 years ago (Aug. 8, 2022, 3:29 p.m.)
Indexed	1 year, 11 months ago (Sept. 13, 2023, 1:03 p.m.)
Issued	64 years, 9 months ago (Dec. 1, 1960)
Published	64 years, 9 months ago (Dec. 1, 1960)
Published Print	64 years, 9 months ago (Dec. 1, 1960)

Funders 0

None

BibTeX

@article{Ando_1960, title={Indirect Transition in Narrow Junction of Ge–Si Alloy}, volume={15}, ISSN={1347-4073}, url={http://dx.doi.org/10.1143/jpsj.15.2360}, DOI={10.1143/jpsj.15.2360}, number={12}, journal={Journal of the Physical Society of Japan}, publisher={Physical Society of Japan}, author={Ando, Kei-ichi}, year={1960}, month=dec, pages={2360–2360} }

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