Abstract
Resistance of semiconductor materials was measured by using a focused electron beam. The experimental error was mainly due to the bulk electron voltaic effect in the material. To reduce the error, the surface of the specimen was sand-lapped. After the treatment the electron beam technique was successfully applied to semiconductor materials, within the error of a few per cent. Energy and current of the electron beam were in the range of 5 to 30 KeV and approximately 1 µA, respectively.
References
9
Referenced
1
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/ Jpn. J. Appl. Phys. (1965)10.1143/JJAP.5.756
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/ Jpn. J. Appl. Phys. (1966)10.1143/JJAP.4.815
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/ Acta Phys. Polon. (1962)
Dates
Type | When |
---|---|
Created | 19 years, 9 months ago (Nov. 4, 2005, 2:26 a.m.) |
Deposited | 2 years, 9 months ago (Nov. 25, 2022, 7:48 a.m.) |
Indexed | 6 months, 1 week ago (Feb. 21, 2025, 5:36 a.m.) |
Issued | 58 years, 8 months ago (Dec. 1, 1966) |
Published | 58 years, 8 months ago (Dec. 1, 1966) |
Published Print | 58 years, 8 months ago (Dec. 1, 1966) |
@article{Munakata_1966, title={Measurement of Resistance by Means of Electron Beam –II–}, volume={5}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.5.1157}, DOI={10.1143/jjap.5.1157}, number={12}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Munakata, Chusuke and Watanabe, Hiroshi}, year={1966}, month=dec, pages={1157} }