Crossref journal-article
IOP Publishing
Japanese Journal of Applied Physics (266)
Abstract

Resistance of semiconductor materials was measured by using a focused electron beam. The experimental error was mainly due to the bulk electron voltaic effect in the material. To reduce the error, the surface of the specimen was sand-lapped. After the treatment the electron beam technique was successfully applied to semiconductor materials, within the error of a few per cent. Energy and current of the electron beam were in the range of 5 to 30 KeV and approximately 1 µA, respectively.

Bibliography

Munakata, C., & Watanabe, H. (1966). Measurement of Resistance by Means of Electron Beam –II–. Japanese Journal of Applied Physics, 5(12), 1157.

Authors 2
  1. Chusuke Munakata (first)
  2. Hiroshi Watanabe (additional)
References 9 Referenced 1
  1. 10.1143/JJAP.4.250 / Jpn. J. Appl. Phys. (1965)
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  6. {'year': '1950', 'key': ''} (1950)
  7. {'year': '1965', 'key': ''} (1965)
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Dates
Type When
Created 19 years, 9 months ago (Nov. 4, 2005, 2:26 a.m.)
Deposited 2 years, 9 months ago (Nov. 25, 2022, 7:48 a.m.)
Indexed 6 months, 1 week ago (Feb. 21, 2025, 5:36 a.m.)
Issued 58 years, 8 months ago (Dec. 1, 1966)
Published 58 years, 8 months ago (Dec. 1, 1966)
Published Print 58 years, 8 months ago (Dec. 1, 1966)
Funders 0

None

@article{Munakata_1966, title={Measurement of Resistance by Means of Electron Beam –II–}, volume={5}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.5.1157}, DOI={10.1143/jjap.5.1157}, number={12}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Munakata, Chusuke and Watanabe, Hiroshi}, year={1966}, month=dec, pages={1157} }