DOI: 10.1143/jjap.49.06gg01. Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate

Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate

10.1143/jjap.49.06gg01

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

In this research, ambipolar behavior, which is one of graphene's unique characteristics, is studied for the epitaxial graphene formed on 3C-SiC grown on a Si substrate. The graphene channel is believed to be unintentionally p-type-doped at Dirac-point voltages of approximately +0.11 to +0.12 V. However, as drain voltage negatively increases, Dirac point voltage shifts. The drain current in the p-channel mode of operation saturates at a lower level than that in the n-channel mode of operation. These behaviors are caused by asymmetric carrier transport throughout channel-substrate heterojunctions (i.e., graphene, thin n-type SiC layer, and p-type Si substrate) and source/drain Schottky metal contacts. The interface between the p-type Si substrate and n-type SiC has a significant effect on transport in graphene channels. The results may be helpful for understanding transport in the device and for suppressing ambipolar operation, leading to a unipolar FET operation.

Bibliography

Olac-vaw, R., Kang, H.-C., Karasawa, H., Miyamoto, Y., Handa, H., Fukidome, H., Suemitsu, T., Suemitsu, M., & Otsuji, T. (2010). Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate. Japanese Journal of Applied Physics, 49(6S), 06GG01.

Authors 9

Roman Olac-vaw (first)
Hyun-Chul Kang (additional)
Hiromi Karasawa (additional)
Yu Miyamoto (additional)
Hiroyuki Handa (additional)
Hirokazu Fukidome (additional)
Tetsuya Suemitsu (additional)
Maki Suemitsu (additional)
Taiichi Otsuji (additional)

References 21 Referenced 10

10.1126/science.1102896 / Science (2004)
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10.1016/j.sse.2007.10.054 / Solid-State Electron. (2008)
10.1063/1.2889959 / Appl. Phys. Lett. (2008)
10.1021/nl803316h / Nano Lett. (2009)
10.1103/PhysRevLett.98.236803 / Phys. Rev. Lett. (2007)
10.1002/pssb.200776208 / Phys. Status Solidi B (2007)
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{'key': ''}
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10.1380/ejssnt.2009.107 / e-J. Surf. Sci. Nanotechnol. (2009)
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10.1103/PhysRevB.79.035421 / Phys. Rev. B (2009)
10.1109/16.506784 / IEEE Trans. Electron Devices (1996)
10.1103/PhysRevLett.101.026803 / Phys. Rev. Lett. (2008)
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Dates

Type	When
Created	15 years, 2 months ago (June 21, 2010, 2:37 a.m.)
Deposited	2 years, 7 months ago (Jan. 5, 2023, 2:33 p.m.)
Indexed	6 months ago (Feb. 21, 2025, 5:37 a.m.)
Issued	15 years, 2 months ago (June 1, 2010)
Published	15 years, 2 months ago (June 1, 2010)
Published Online	15 years, 2 months ago (June 21, 2010)
Published Print	15 years, 2 months ago (June 1, 2010)

Funders 0

None

BibTeX

@article{Olac_vaw_2010, title={Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate}, volume={49}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.49.06gg01}, DOI={10.1143/jjap.49.06gg01}, number={6S}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Olac-vaw, Roman and Kang, Hyun-Chul and Karasawa, Hiromi and Miyamoto, Yu and Handa, Hiroyuki and Fukidome, Hirokazu and Suemitsu, Tetsuya and Suemitsu, Maki and Otsuji, Taiichi}, year={2010}, month=jun, pages={06GG01} }

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