DOI: 10.1143/jjap.47.8472. Fabrication and Electrical Characteristics of Metal–Ferroelectric–Semiconductor Field Effect Transistor Based on Poly(vinylidene fluoride)

Fabrication and Electrical Characteristics of Metal–Ferroelectric–Semiconductor Field Effect Transistor Based on Poly(vinylidene fluoride)

10.1143/jjap.47.8472

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Bibliography

Kim, J. H., Park, B. E., & Ishiwara, H. (2008). Fabrication and Electrical Characteristics of MetalâFerroelectricâSemiconductor Field Effect Transistor Based on Poly(vinylidene fluoride). Japanese Journal of Applied Physics, 47(11R), 8472.

Authors 3

Jeong Hwan Kim (first)
Byung Eun Park (additional)
Hiroshi Ishiwara (additional)

References 16 Referenced 16

10.1109/T-ED.1974.17955 / IEEE Trans. Electron Devices (1974)
10.1109/55.678545 / IEEE Electron Device Lett. (1998)
10.1109/55.791931 / IEEE Electron Device Lett. (1999)
{'year': '2002', 'key': '[4]'} (2002)
10.3938/jkps.51.100 / J. Korean Phys. Soc. (2007)
10.1143/JJAP.44.L800 / Jpn. J. Appl. Phys. (2005)
10.1143/JJAP.44.6218 / Jpn. J. Appl. Phys. (2005)
10.1143/JJAP.46.6676 / Jpn. J. Appl. Phys. (2007)
10.3938/jkps.51.723 / J. Korean Phys. Soc. (2007)
10.1080/01411598908206863 / Phase Transition (1989)
10.3938/jkps.51.719 / J. Korean Phys. Soc. (2007)
10.1063/1.2713856 / Appl. Phys. Lett. (2007)
10.1063/1.2723678 / Appl. Phys. Lett. (2007)
10.1063/1.2830701 / Appl. Phys. Lett. (2008)
10.1126/science.220.4602.1115 / Science (1983)
10.1063/1.118180 / Appl. Phys. Lett. (1997)

Dates

Type	When
Created	16 years, 9 months ago (Nov. 14, 2008, 11:21 p.m.)
Deposited	1 year, 8 months ago (Dec. 8, 2023, 7:30 a.m.)
Indexed	1 month ago (July 27, 2025, 3:50 a.m.)
Issued	16 years, 9 months ago (Nov. 1, 2008)
Published	16 years, 9 months ago (Nov. 1, 2008)
Published Online	16 years, 9 months ago (Nov. 14, 2008)
Published Print	16 years, 9 months ago (Nov. 1, 2008)

Funders 0

None

BibTeX

@article{Kim_2008, title={Fabrication and Electrical Characteristics of Metal–Ferroelectric–Semiconductor Field Effect Transistor Based on Poly(vinylidene fluoride)}, volume={47}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.47.8472}, DOI={10.1143/jjap.47.8472}, number={11R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Kim, Jeong Hwan and Park, Byung Eun and Ishiwara, Hiroshi}, year={2008}, month=nov, pages={8472} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        27
      ]
    ],
    "date-time": "2025-07-27T07:50:54Z",
    "timestamp": 1753602654439,
    "version": "3.37.3"
  },
  "reference-count": 16,
  "publisher": "IOP Publishing",
  "issue": "11R",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2008,
            11,
            14
          ]
        ],
        "date-time": "2008-11-14T00:00:00Z",
        "timestamp": 1226620800000
      },
      "content-version": "vor",
      "delay-in-days": 13,
      "URL": "https://iopscience.iop.org/page/copyright"
    },
    {
      "start": {
        "date-parts": [
          [
            2008,
            11,
            14
          ]
        ],
        "date-time": "2008-11-14T00:00:00Z",
        "timestamp": 1226620800000
      },
      "content-version": "tdm",
      "delay-in-days": 13,
      "URL": "https://iopscience.iop.org/info/page/text-and-data-mining"
    }
  ],
  "content-domain": {
    "domain": [
      "iopscience.iop.org"
    ],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        2008,
        11,
        1
      ]
    ]
  },
  "DOI": "10.1143/jjap.47.8472",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2008,
        11,
        15
      ]
    ],
    "date-time": "2008-11-15T04:21:59Z",
    "timestamp": 1226722919000
  },
  "page": "8472",
  "update-policy": "https://doi.org/10.1088/crossmark-policy",
  "source": "Crossref",
  "is-referenced-by-count": 16,
  "title": "Fabrication and Electrical Characteristics of Metal\u2013Ferroelectric\u2013Semiconductor Field Effect Transistor Based on Poly(vinylidene fluoride)",
  "prefix": "10.35848",
  "volume": "47",
  "author": [
    {
      "given": "Jeong Hwan",
      "family": "Kim",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "Byung Eun",
      "family": "Park",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Hiroshi",
      "family": "Ishiwara",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "266",
  "published-online": {
    "date-parts": [
      [
        2008,
        11,
        14
      ]
    ]
  },
  "reference": [
    {
      "key": "[1]",
      "doi-asserted-by": "publisher",
      "first-page": "499",
      "DOI": "10.1109/T-ED.1974.17955",
      "volume": "21",
      "year": "1974",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "[2]",
      "doi-asserted-by": "publisher",
      "first-page": "204",
      "DOI": "10.1109/55.678545",
      "volume": "19",
      "year": "1998",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "[3]",
      "doi-asserted-by": "publisher",
      "first-page": "526",
      "DOI": "10.1109/55.791931",
      "volume": "20",
      "year": "1999",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "year": "2002",
      "key": "[4]"
    },
    {
      "key": "[5]",
      "doi-asserted-by": "publisher",
      "first-page": "S100",
      "DOI": "10.3938/jkps.51.100",
      "volume": "51",
      "year": "2007",
      "journal-title": "J. Korean Phys. Soc."
    },
    {
      "key": "[6]",
      "doi-asserted-by": "publisher",
      "first-page": "L800",
      "DOI": "10.1143/JJAP.44.L800",
      "volume": "44",
      "year": "2005",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "[7]",
      "doi-asserted-by": "publisher",
      "first-page": "6218",
      "DOI": "10.1143/JJAP.44.6218",
      "volume": "44",
      "year": "2005",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "[8]",
      "doi-asserted-by": "publisher",
      "first-page": "6676",
      "DOI": "10.1143/JJAP.46.6676",
      "volume": "46",
      "year": "2007",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "[9]",
      "doi-asserted-by": "publisher",
      "first-page": "723",
      "DOI": "10.3938/jkps.51.723",
      "volume": "51",
      "year": "2007",
      "journal-title": "J. Korean Phys. Soc."
    },
    {
      "key": "[10]",
      "doi-asserted-by": "publisher",
      "first-page": "143",
      "DOI": "10.1080/01411598908206863",
      "volume": "18",
      "year": "1989",
      "journal-title": "Phase Transition"
    },
    {
      "key": "[11]",
      "doi-asserted-by": "publisher",
      "first-page": "719",
      "DOI": "10.3938/jkps.51.719",
      "volume": "51",
      "year": "2007",
      "journal-title": "J. Korean Phys. Soc."
    },
    {
      "key": "[12]",
      "doi-asserted-by": "publisher",
      "first-page": "113509",
      "DOI": "10.1063/1.2713856",
      "volume": "90",
      "year": "2007",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "[13]",
      "doi-asserted-by": "publisher",
      "first-page": "162902",
      "DOI": "10.1063/1.2723678",
      "volume": "90",
      "year": "2007",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "[14]",
      "doi-asserted-by": "publisher",
      "first-page": "012921",
      "DOI": "10.1063/1.2830701",
      "volume": "92",
      "year": "2008",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "[15]",
      "doi-asserted-by": "publisher",
      "first-page": "1115",
      "DOI": "10.1126/science.220.4602.1115",
      "volume": "220",
      "year": "1983",
      "journal-title": "Science"
    },
    {
      "key": "[16]",
      "doi-asserted-by": "publisher",
      "first-page": "458",
      "DOI": "10.1063/1.118180",
      "volume": "70",
      "year": "1997",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Japanese Journal of Applied Physics",
  "original-title": [],
  "link": [
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.47.8472",
      "content-type": "text/html",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.47.8472/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.47.8472/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.47.8472/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        12,
        8
      ]
    ],
    "date-time": "2023-12-08T12:30:53Z",
    "timestamp": 1702038653000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.47.8472"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2008,
        11,
        1
      ]
    ]
  },
  "references-count": 16,
  "journal-issue": {
    "issue": "11R",
    "published-online": {
      "date-parts": [
        [
          2008,
          11,
          14
        ]
      ]
    },
    "published-print": {
      "date-parts": [
        [
          2008,
          11,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1143/JJAP.47.8472",
  "relation": {},
  "ISSN": [
    "0021-4922",
    "1347-4065"
  ],
  "subject": [],
  "container-title-short": "jjap",
  "published": {
    "date-parts": [
      [
        2008,
        11,
        1
      ]
    ]
  },
  "assertion": [
    {
      "value": "Fabrication and Electrical Characteristics of Metal\u2013Ferroelectric\u2013Semiconductor Field Effect Transistor Based on Poly(vinylidene fluoride)",
      "name": "article_title",
      "label": "Article Title"
    },
    {
      "value": "Japanese Journal of Applied Physics",
      "name": "journal_title",
      "label": "Journal Title"
    },
    {
      "value": "paper",
      "name": "article_type",
      "label": "Article Type"
    },
    {
      "value": "Copyright (c) 2008 The Japan Society of Applied Physics",
      "name": "copyright_information",
      "label": "Copyright Information"
    },
    {
      "value": "2008-05-13",
      "name": "date_received",
      "label": "Date Received",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "value": "2008-08-11",
      "name": "date_accepted",
      "label": "Date Accepted",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "value": "2008-11-14",
      "name": "date_epub",
      "label": "Online publication date",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    }
  ]
}