DOI: 10.1143/jjap.46.l602. Te-Free SiSb Phase Change Material for High Data Retention Phase Change Memory Application

Te-Free SiSb Phase Change Material for High Data Retention Phase Change Memory Application

10.1143/jjap.46.l602

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Bibliography

Zhang, T., Song, Z., Wang, F., Liu, B., Feng, S., & Chen, B. (2007). Te-Free SiSb Phase Change Material for High Data Retention Phase Change Memory Application. Japanese Journal of Applied Physics, 46(7L), L602.

Authors 6

Ting Zhang (first)
Zhitang Song (additional)
Feng Wang (additional)
Bo Liu (additional)
Songlin Feng (additional)
Bomy Chen (additional)

References 9 Referenced 30

{'year': '2003', 'key': '[1]'} (2003)
{'key': '[2]'}
10.1143/JJAP.45.3233 / Jpn. J. Appl. Phys. (2006)
10.1143/JJAP.46.L247 / Jpn. J. Appl. Phys. (2007)
{'journal-title': 'Solid-State Electron.', 'key': '[5]'} / Solid-State Electron.
10.1063/1.2719148 / Appl. Phys. Lett. (2007)
10.1063/1.2450656 / Appl. Phys. Lett. (2007)
10.1143/JJAP.42.863 / Jpn. J. Appl. Phys. (2003)
10.1016/j.sse.2005.10.046 / Solid-State Electron. (2006)

Dates

Type	When
Created	18 years, 2 months ago (June 21, 2007, 9:15 p.m.)
Deposited	1 year, 8 months ago (Dec. 7, 2023, 11:39 a.m.)
Indexed	4 months, 1 week ago (April 15, 2025, 3:34 a.m.)
Issued	18 years, 2 months ago (June 22, 2007)
Published	18 years, 2 months ago (June 22, 2007)
Published Online	18 years, 2 months ago (June 22, 2007)
Published Print	18 years, 1 month ago (July 1, 2007)

Funders 0

None

BibTeX

@article{Zhang_2007, title={Te-Free SiSb Phase Change Material for High Data Retention Phase Change Memory Application}, volume={46}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.46.l602}, DOI={10.1143/jjap.46.l602}, number={7L}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Zhang, Ting and Song, Zhitang and Wang, Feng and Liu, Bo and Feng, Songlin and Chen, Bomy}, year={2007}, month=jun, pages={L602} }

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