Abstract
Nano-photodiodes with a subwavelength active area using the optical near-field enhanced by surface plasmon resonance are proposed. We fabricated a Si Schottky photodiode that consists of an active area of 300 nm in diameter and a surface plasmon antenna to generate the carrier within the active area efficiently. The fabricated photodiode shows an increase of the photocurrent by several tenfold compared to that without a surface plasmon antenna. This result suggests an enhanced photogeneration of carriers in a semiconductor via surface plasmon resonance. Such a Si nano-photodiode is a potential high-speed optical signal detector because the opto-electronic conversion process occurs within a subwavelength scale.
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Dates
Type | When |
---|---|
Created | 20 years, 1 month ago (July 2, 2005, 6:13 a.m.) |
Deposited | 2 years, 8 months ago (Dec. 19, 2022, 1:10 p.m.) |
Indexed | 12 hours, 47 minutes ago (Aug. 27, 2025, 12:14 p.m.) |
Issued | 20 years, 5 months ago (March 1, 2005) |
Published | 20 years, 5 months ago (March 1, 2005) |
Published Online | 20 years, 5 months ago (March 4, 2005) |
Published Print | 20 years, 5 months ago (March 1, 2005) |
@article{Ishi_2005, title={Si Nano-Photodiode with a Surface Plasmon Antenna}, volume={44}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.44.l364}, DOI={10.1143/jjap.44.l364}, number={3L}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Ishi, Tsutomu and Fujikata, Junichi and Makita, Kikuo and Baba, Toshio and Ohashi, Keishi}, year={2005}, month=mar, pages={L364} }