DOI: 10.1143/jjap.44.l1301. Study of Transport and Dielectric of Resistive Memory States in NiO Thin Film

Study of Transport and Dielectric of Resistive Memory States in NiO Thin Film

10.1143/jjap.44.l1301

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

We have measured the DC resistance R(T) and AC dielectric constant ε(ω) for the bistable high-R and low-R states of NiO thin film. The high-R state shows thermally activated resistance and Debye relaxation of ε(ω). In the low-R state, R(T) exhibits a metallic temperature dependence of R(300 K)/R(5 K)=1.6. The value of ε(ω) is drastically different from that of the high-R state, and we interpret it in terms of the free-carrier Drude dielectric response. The plasma frequency ω p 2 in the metallic low-R state is estimated to be 1.2×109/cm3.

Bibliography

Kim, M. G., Kim, S. M., Choi, E. J., Moon, S. E., Park, J., Kim, H. C., Park, B. H., Lee, M. J., Seo, S., Seo, D. H., Ahn, S. E., & Yoo, I. K. (2005). Study of Transport and Dielectric of Resistive Memory States in NiO Thin Film. Japanese Journal of Applied Physics, 44(10L), L1301.

Authors 12

Min Gyu Kim (first)
Sun Man Kim (additional)
Eun Jip Choi (additional)
Seung Eon Moon (additional)
Jonghyurk Park (additional)
Hyoung Chan Kim (additional)
Bae Ho Park (additional)
Myoung Jae Lee (additional)
Sunae Seo (additional)
David H. Seo (additional)
Seung Eun Ahn (additional)
In Kyeong Yoo (additional)

References 15 Referenced 27

10.1063/1.1659895 / J. Appl. Phys. (1971)
10.1103/PhysRevLett.21.1450 / Phys. Rev. Lett. (1968)
10.1007/BF00752875 / J. Struct. Chem. (1993)
10.1016/0022-3093(75)90115-5 / J. Non-Cryst. Solids (1975)
{'key': '', 'first-page': '647', 'volume': '2', 'year': '1968', 'journal-title': 'Sov. Phys. Semicond.'} / Sov. Phys. Semicond. (1968)
10.1063/1.1377617 / Appl. Phys. Lett. (2001)
10.1016/0038-1101(68)90092-0 / Solid-State Electron. (1968)
10.1063/1.1754187 / Appl. Phys. Lett. (1965)
10.1063/1.1653024 / Appl. Phys. Lett. (1970)
10.1103/PhysRevB.70.172106 / Phys. Rev. B (2004)
10.1002/pssa.2211080102 / Phys. Status Solidi A (1988)
{'key': '', 'first-page': '1', 'volume': '15', 'year': '1977', 'journal-title': 'Chin. J. Phys.'} / Chin. J. Phys. (1977)
10.1103/PhysRevLett.89.217601 / Phys. Rev. Lett. (2002)
{'year': '1983', 'key': ''} (1983)
{'year': '2001', 'key': ''} (2001)

Dates

Type	When
Created	19 years, 10 months ago (Oct. 18, 2005, 6:19 a.m.)
Deposited	2 years, 8 months ago (Dec. 19, 2022, 1:16 p.m.)
Indexed	6 months, 1 week ago (Feb. 21, 2025, 5:35 a.m.)
Issued	19 years, 11 months ago (Oct. 1, 2005)
Published	19 years, 11 months ago (Oct. 1, 2005)
Published Online	19 years, 10 months ago (Oct. 7, 2005)
Published Print	19 years, 11 months ago (Oct. 1, 2005)

Funders 0

None

BibTeX

@article{Kim_2005, title={Study of Transport and Dielectric of Resistive Memory States in NiO Thin Film}, volume={44}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.44.l1301}, DOI={10.1143/jjap.44.l1301}, number={10L}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Kim, Min Gyu and Kim, Sun Man and Choi, Eun Jip and Moon, Seung Eon and Park, Jonghyurk and Kim, Hyoung Chan and Park, Bae Ho and Lee, Myoung Jae and Seo, Sunae and Seo, David H. and Ahn, Seung Eun and Yoo, In Kyeong}, year={2005}, month=oct, pages={L1301} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        2,
        21
      ]
    ],
    "date-time": "2025-02-21T10:35:34Z",
    "timestamp": 1740134134631,
    "version": "3.37.3"
  },
  "reference-count": 15,
  "publisher": "IOP Publishing",
  "issue": "10L",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2005,
            10,
            7
          ]
        ],
        "date-time": "2005-10-07T00:00:00Z",
        "timestamp": 1128643200000
      },
      "content-version": "vor",
      "delay-in-days": 6,
      "URL": "https://iopscience.iop.org/page/copyright"
    },
    {
      "start": {
        "date-parts": [
          [
            2005,
            10,
            7
          ]
        ],
        "date-time": "2005-10-07T00:00:00Z",
        "timestamp": 1128643200000
      },
      "content-version": "tdm",
      "delay-in-days": 6,
      "URL": "https://iopscience.iop.org/info/page/text-and-data-mining"
    }
  ],
  "content-domain": {
    "domain": [
      "iopscience.iop.org"
    ],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        2005,
        10,
        1
      ]
    ]
  },
  "abstract": "<jats:p> \n  We have measured the DC resistance <jats:italic>R</jats:italic>(<jats:italic>T</jats:italic>) and AC dielectric constant <jats:italic>\u03b5</jats:italic>(\u03c9) for the bistable high-<jats:italic>R</jats:italic> and low-<jats:italic>R</jats:italic> states of NiO thin film. The high-<jats:italic>R</jats:italic> state shows thermally activated resistance and Debye relaxation of <jats:italic>\u03b5</jats:italic>(\u03c9). In the low-<jats:italic>R</jats:italic> state, <jats:italic>R</jats:italic>(<jats:italic>T</jats:italic>) exhibits a metallic temperature dependence of <jats:italic>R</jats:italic>(300 K)/<jats:italic>R</jats:italic>(5 K)=1.6. The value of <jats:italic>\u03b5</jats:italic>(\u03c9) is drastically different from that of the high-<jats:italic>R</jats:italic> state, and we interpret it in terms of the free-carrier Drude dielectric response. The plasma frequency \u03c9<jats:sub>\n                     <jats:italic>p</jats:italic>\n                  </jats:sub>\n                  <jats:sup>2</jats:sup> in the metallic low-<jats:italic>R</jats:italic> state is estimated to be 1.2\u00d710<jats:sup>9</jats:sup>/cm<jats:sup>3</jats:sup>. \n  </jats:p>",
  "DOI": "10.1143/jjap.44.l1301",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2005,
        10,
        18
      ]
    ],
    "date-time": "2005-10-18T10:19:06Z",
    "timestamp": 1129630746000
  },
  "page": "L1301",
  "update-policy": "https://doi.org/10.1088/crossmark-policy",
  "source": "Crossref",
  "is-referenced-by-count": 27,
  "title": "Study of Transport and Dielectric of Resistive Memory States in NiO Thin Film",
  "prefix": "10.35848",
  "volume": "44",
  "author": [
    {
      "given": "Min Gyu",
      "family": "Kim",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "Sun Man",
      "family": "Kim",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Eun Jip",
      "family": "Choi",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Seung Eon",
      "family": "Moon",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Jonghyurk",
      "family": "Park",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Hyoung Chan",
      "family": "Kim",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Bae Ho",
      "family": "Park",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Myoung Jae",
      "family": "Lee",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Sunae",
      "family": "Seo",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "David H.",
      "family": "Seo",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Seung Eun",
      "family": "Ahn",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "In Kyeong",
      "family": "Yoo",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "266",
  "published-online": {
    "date-parts": [
      [
        2005,
        10,
        7
      ]
    ]
  },
  "reference": [
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "5076",
      "DOI": "10.1063/1.1659895",
      "volume": "42",
      "year": "1971",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1450",
      "DOI": "10.1103/PhysRevLett.21.1450",
      "volume": "21",
      "year": "1968",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "966",
      "DOI": "10.1007/BF00752875",
      "volume": "34",
      "year": "1993",
      "journal-title": "J. Struct. Chem."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "81",
      "DOI": "10.1016/0022-3093(75)90115-5",
      "volume": "17",
      "year": "1975",
      "journal-title": "J. Non-Cryst. Solids"
    },
    {
      "key": "",
      "first-page": "647",
      "volume": "2",
      "year": "1968",
      "journal-title": "Sov. Phys. Semicond."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "3738",
      "DOI": "10.1063/1.1377617",
      "volume": "78",
      "year": "2001",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "535",
      "DOI": "10.1016/0038-1101(68)90092-0",
      "volume": "11",
      "year": "1968",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "106",
      "DOI": "10.1063/1.1754187",
      "volume": "6",
      "year": "1965",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "40",
      "DOI": "10.1063/1.1653024",
      "volume": "16",
      "year": "1970",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "172106",
      "DOI": "10.1103/PhysRevB.70.172106",
      "volume": "70",
      "year": "2004",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "11",
      "DOI": "10.1002/pssa.2211080102",
      "volume": "108",
      "year": "1988",
      "journal-title": "Phys. Status Solidi A"
    },
    {
      "key": "",
      "first-page": "1",
      "volume": "15",
      "year": "1977",
      "journal-title": "Chin. J. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "217601",
      "DOI": "10.1103/PhysRevLett.89.217601",
      "volume": "89",
      "year": "2002",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "year": "1983",
      "key": ""
    },
    {
      "year": "2001",
      "key": ""
    }
  ],
  "container-title": "Japanese Journal of Applied Physics",
  "original-title": [],
  "link": [
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.44.L1301",
      "content-type": "text/html",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.44.L1301/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.44.L1301/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.44.L1301/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2022,
        12,
        19
      ]
    ],
    "date-time": "2022-12-19T18:16:17Z",
    "timestamp": 1671473777000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.44.L1301"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2005,
        10,
        1
      ]
    ]
  },
  "references-count": 15,
  "journal-issue": {
    "issue": "10L",
    "published-online": {
      "date-parts": [
        [
          2005,
          10,
          7
        ]
      ]
    },
    "published-print": {
      "date-parts": [
        [
          2005,
          10,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1143/JJAP.44.L1301",
  "relation": {},
  "ISSN": [
    "0021-4922",
    "1347-4065"
  ],
  "subject": [],
  "container-title-short": "Jpn. J. Appl. Phys.",
  "published": {
    "date-parts": [
      [
        2005,
        10,
        1
      ]
    ]
  },
  "assertion": [
    {
      "value": "Study of Transport and Dielectric of Resistive Memory States in NiO Thin Film",
      "name": "article_title",
      "label": "Article Title"
    },
    {
      "value": "Japanese Journal of Applied Physics",
      "name": "journal_title",
      "label": "Journal Title"
    },
    {
      "value": "paper",
      "name": "article_type",
      "label": "Article Type"
    },
    {
      "value": "Copyright (c) 2005 The Japan Society of Applied Physics",
      "name": "copyright_information",
      "label": "Copyright Information"
    },
    {
      "value": "2005-06-24",
      "name": "date_received",
      "label": "Date Received",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "value": "2005-07-30",
      "name": "date_accepted",
      "label": "Date Accepted",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "value": "2005-10-07",
      "name": "date_epub",
      "label": "Online publication date",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    }
  ]
}