DOI: 10.1143/jjap.44.7340. Electronic Properties of Amorphous and Crystalline Ge2Sb2Te5 Films

Electronic Properties of Amorphous and Crystalline Ge2Sb2Te5 Films

10.1143/jjap.44.7340

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Optical and electrical properties of sputtered Ge2Sb2Te5 films in amorphous and crystalline states have been studied. The optical band-gaps of amorphous, cubic (NaCl-type), and hexagonal Ge2Sb2Te5 are 0.74, 0.5, and 0.5 eV, respectively. Electrically, the amorphous and cubic states behave as semiconductors with activation energies of 0.45 and 0.14 eV, while the hexagonal state is metallic. The resistivity decreases slightly at the melting point of ∼600°C. All the states show p-type thermoelectric power, in which the amorphous and the cubic state have the activation energies of 0.3 and 0.14 eV. Carrier parameters and electronic densities-of-states are estimated and considered.

Bibliography

Kato, T., & Tanaka, K. (2005). Electronic Properties of Amorphous and Crystalline Ge2Sb2Te5 Films. Japanese Journal of Applied Physics, 44(10R), 7340.

Authors 2

Takayuki Kato (first)
Keiji Tanaka (additional)

References 37 Referenced 225

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Dates

Type	When
Created	19 years, 10 months ago (Oct. 18, 2005, 6:27 a.m.)
Deposited	2 years, 8 months ago (Dec. 19, 2022, 12:38 p.m.)
Indexed	3 weeks, 6 days ago (July 26, 2025, 5:13 a.m.)
Issued	19 years, 10 months ago (Oct. 1, 2005)
Published	19 years, 10 months ago (Oct. 1, 2005)
Published Online	19 years, 10 months ago (Oct. 11, 2005)
Published Print	19 years, 10 months ago (Oct. 1, 2005)

Funders 0

None

BibTeX

@article{Kato_2005, title={Electronic Properties of Amorphous and Crystalline Ge2Sb2Te5 Films}, volume={44}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.44.7340}, DOI={10.1143/jjap.44.7340}, number={10R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Kato, Takayuki and Tanaka, Keiji}, year={2005}, month=oct, pages={7340} }

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