DOI: 10.1143/jjap.44.6981. Electrical Characterization of Germanium Oxide/Germanium Interface Prepared by Electron-Cyclotron-Resonance Plasma Irradiation

Electrical Characterization of Germanium Oxide/Germanium Interface Prepared by Electron-Cyclotron-Resonance Plasma Irradiation

10.1143/jjap.44.6981

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

We have found excellent electrical characteristics in germanium oxide grown by plasma oxidation for germanium metal-insulator-semiconductor gate dielectric applications. An oxygen plasma stream generated by electron cyclotron resonance was used to oxidize a germanium surface without substrate heating. A transmission electron microscope observation revealed that the obtained germanium oxide/germanium interface is atomically smooth. The energy distribution of interface trap density (D it) in the upper half of the p-type germanium band gap was measured by the ac conductance method. It is shown that the D it at the midgap is ∼6 ×1010 cm-2·eV-1 and increases exponentially as the energy increases to the conduction-band edge.

Bibliography

Fukuda, Y., Ueno, T., Hirono, S., & Hashimoto, S. (2005). Electrical Characterization of Germanium Oxide/Germanium Interface Prepared by Electron-Cyclotron-Resonance Plasma Irradiation. Japanese Journal of Applied Physics, 44(9S), 6981.

Authors 4

Yukio Fukuda (first)
Tomoo Ueno (additional)
Shigeru Hirono (additional)
Satoshi Hashimoto (additional)

References 13 Referenced 72

{'key': ''}
10.1063/1.126821 / Appl. Phys. Lett. (2000)
10.1109/LED.2003.810879 / IEEE Electron Device Lett. (2003)
10.1109/LED.2003.823060 / IEEE Electron Device Lett. (2004)
10.1109/LED.2004.824247 / IEEE Electron Device Lett. (2004)
{'key': ''}
10.1109/55.119212 / IEEE Electron Device Lett. (1991)
10.1143/JJAP.22.L210 / Jpn. J. Appl. Phys. (1983)
10.1116/1.579833 / J. Vac. Sci. & Technol. A (1995)
10.1116/1.1565347 / J. Vac. Sci. & Technol. B (2003)
10.1149/1.1803832 / J. Electrochem. Soc. (2004)
10.1143/JJAP.43.L765 / Jpn. J. Appl. Phys. (2004)
{'year': '1981', 'key': ''} (1981)

Dates

Type	When
Created	19 years, 10 months ago (Oct. 18, 2005, 6:15 a.m.)
Deposited	2 years, 8 months ago (Dec. 19, 2022, 1:12 p.m.)
Indexed	3 weeks, 4 days ago (Aug. 12, 2025, 5:44 p.m.)
Issued	20 years ago (Sept. 1, 2005)
Published	20 years ago (Sept. 1, 2005)
Published Online	19 years, 11 months ago (Sept. 22, 2005)
Published Print	20 years ago (Sept. 1, 2005)

Funders 0

None

BibTeX

@article{Fukuda_2005, title={Electrical Characterization of Germanium Oxide/Germanium Interface Prepared by Electron-Cyclotron-Resonance Plasma Irradiation}, volume={44}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.44.6981}, DOI={10.1143/jjap.44.6981}, number={9S}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Fukuda, Yukio and Ueno, Tomoo and Hirono, Shigeru and Hashimoto, Satoshi}, year={2005}, month=sep, pages={6981} }

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