DOI: 10.1143/jjap.44.6218. Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO<sub>2</sub> Buffer Layers

Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO2 Buffer Layers

10.1143/jjap.44.6218

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Metal–ferroelectric–insulator–semiconductor (MFIS) diodes and p-channel MFIS field-effect transistors (FETs) were fabricated and their electrical properties were characterized. These MFIS structures were formed using HfO2 as an insulating buffer layer, and SrBi2Ta2O9 (SBT) and (Bi,La)4Ti3O12 (BLT) as ferroelectric films. HfO2 buffer layers of about 8 nm physical thickness were deposited by ultrahigh-vacuum (UHV) electron-beam evaporation, then ferroelectric films of about 400 nm thickness were deposited by sol–gel spin coating. The fabricated p-channel MFIS-FETs with the SBT/HfO2 gate structure exhibited a drain current on/off ratio larger than 103 even after 30 days had elapsed. It was also found that the degradation of ferroelectricity was not pronounced even after applying 2.2×1011 bipolar pulses.

Bibliography

Takahashi, K., Aizawa, K., Park, B.-E., & Ishiwara, H. (2005). Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO2 Buffer Layers. Japanese Journal of Applied Physics, 44(8R), 6218.

Authors 4

Kazuhiro Takahashi (first)
Koji Aizawa (additional)
Byung-Eun Park (additional)
Hiroshi Ishiwara (additional)

References 7 Referenced 103

10.1109/55.981313 / IEEE Electron Device Lett. (2002)
10.1109/LED.2004.828992 / IEEE Electron Device Lett. (2004)
10.1063/1.1806274 / Appl. Phys. Lett. (2004)
10.1063/1.1814437 / Appl. Phys. Lett. (2004)
10.1063/1.1556966 / Appl. Phys. Lett. (2003)
{'key': '', 'first-page': 'C9', 'volume': '784', 'year': '2004', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (2004)
10.1038/44352 / Nature (1999)

Dates

Type	When
Created	19 years, 11 months ago (Sept. 15, 2005, 4:29 a.m.)
Deposited	2 years, 8 months ago (Dec. 19, 2022, 12:37 p.m.)
Indexed	6 months, 1 week ago (Feb. 21, 2025, 5:35 a.m.)
Issued	20 years ago (Aug. 1, 2005)
Published	20 years ago (Aug. 1, 2005)
Published Online	20 years ago (Aug. 5, 2005)
Published Print	20 years ago (Aug. 1, 2005)

Funders 0

None

BibTeX

@article{Takahashi_2005, title={Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO2 Buffer Layers}, volume={44}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.44.6218}, DOI={10.1143/jjap.44.6218}, number={8R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Takahashi, Kazuhiro and Aizawa, Koji and Park, Byung-Eun and Ishiwara, Hiroshi}, year={2005}, month=aug, pages={6218} }

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