Crossref journal-article
IOP Publishing
Japanese Journal of Applied Physics (266)
Abstract

Crystallization in amorphous Ge2Sb2Te5 films has been demonstrated using scanning tunneling microscopes. Pulse voltages higher than 3 V applied through W tips produce electrically conductive deformed marks with a diameter larger than ∼50 nm. Raman scattering spectra show that such marks contain crystalline Te, which indicates that a structural phase change from amorphous to crystalline states is induced. The formation processes of the marks are discussed.

Bibliography

Sugawara, K., Gotoh, T., & Tanaka, K. (2004). Nanoscale Phase Change in Telluride Films Induced with Scanning Tunneling Microscopes. Japanese Journal of Applied Physics, 43(5B), L676.

Authors 3
  1. Kentaro Sugawara (first)
  2. Tamihiro Gotoh (additional)
  3. Keiji Tanaka (additional)
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Dates
Type When
Created 20 years, 6 months ago (Feb. 9, 2005, 8:25 p.m.)
Deposited 2 years, 8 months ago (Dec. 19, 2022, 12:28 p.m.)
Indexed 1 week, 4 days ago (Aug. 19, 2025, 6:31 a.m.)
Issued 21 years, 4 months ago (April 28, 2004)
Published 21 years, 4 months ago (April 28, 2004)
Published Online 21 years, 4 months ago (April 28, 2004)
Published Print 21 years, 3 months ago (May 1, 2004)
Funders 0

None

@article{Sugawara_2004, title={Nanoscale Phase Change in Telluride Films Induced with Scanning Tunneling Microscopes}, volume={43}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.43.l676}, DOI={10.1143/jjap.43.l676}, number={5B}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Sugawara, Kentaro and Gotoh, Tamihiro and Tanaka, Keiji}, year={2004}, month=apr, pages={L676} }