DOI: 10.1143/jjap.43.l1475. 18.5% Copper Indium Gallium Diselenide (CIGS) Device Using Single-Layer, Chemical-Bath-Deposited ZnS(O,OH)

18.5% Copper Indium Gallium Diselenide (CIGS) Device Using Single-Layer, Chemical-Bath-Deposited ZnS(O,OH)

10.1143/jjap.43.l1475

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Bibliography

Bhattacharya, R. N., Contreras, M. A., & Teeter, G. (2004). 18.5% Copper Indium Gallium Diselenide (CIGS) Device Using Single-Layer, Chemical-Bath-Deposited ZnS(O,OH). Japanese Journal of Applied Physics, 43(No. 11B), L1475âL1476.

Authors 3

Raghu N. Bhattacharya (first)
Miguel A. Contreras (additional)
Glenn Teeter (additional)

References 0 Referenced 83

None

Dates

Type	When
Created	20 years, 6 months ago (Feb. 9, 2005, 8:31 p.m.)
Deposited	5 years, 3 months ago (May 31, 2020, 7:04 p.m.)
Indexed	11 months, 3 weeks ago (Sept. 6, 2024, 5:40 p.m.)
Issued	20 years, 10 months ago (Oct. 22, 2004)
Published	20 years, 10 months ago (Oct. 22, 2004)
Published Online	20 years, 10 months ago (Oct. 22, 2004)

Funders 0

None

BibTeX

@article{Bhattacharya_2004, title={18.5% Copper Indium Gallium Diselenide (CIGS) Device Using Single-Layer, Chemical-Bath-Deposited ZnS(O,OH)}, volume={43}, ISSN={0021-4922}, url={http://dx.doi.org/10.1143/jjap.43.l1475}, DOI={10.1143/jjap.43.l1475}, number={No. 11B}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Bhattacharya, Raghu N. and Contreras, Miguel A. and Teeter, Glenn}, year={2004}, month=oct, pages={L1475–L1476} }

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