DOI: 10.1143/jjap.41.l540. High-Quality InN Film Grown on a Low-Temperature-Grown GaN Intermediate Layer by Plasma-Assisted Molecular-Beam Epitaxy

High-Quality InN Film Grown on a Low-Temperature-Grown GaN Intermediate Layer by Plasma-Assisted Molecular-Beam Epitaxy

10.1143/jjap.41.l540

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Bibliography

Higashiwaki, M., & Matsui, T. (2002). High-Quality InN Film Grown on a Low-Temperature-Grown GaN Intermediate Layer by Plasma-Assisted Molecular-Beam Epitaxy. Japanese Journal of Applied Physics, 41(Part 2, No. 5B), L540âL542.

Authors 2

Masataka Higashiwaki (first)
Toshiaki Matsui (additional)

References 0 Referenced 81

None

Dates

Type	When
Created	22 years, 11 months ago (Oct. 1, 2002, 5:20 p.m.)
Deposited	5 years, 3 months ago (May 31, 2020, 6:55 p.m.)
Indexed	1 year, 6 months ago (Feb. 7, 2024, 6:56 p.m.)
Issued	23 years, 3 months ago (May 15, 2002)
Published	23 years, 3 months ago (May 15, 2002)
Published Print	23 years, 3 months ago (May 15, 2002)

Funders 0

None

BibTeX

@article{Higashiwaki_2002, title={High-Quality InN Film Grown on a Low-Temperature-Grown GaN Intermediate Layer by Plasma-Assisted Molecular-Beam Epitaxy}, volume={41}, ISSN={0021-4922}, url={http://dx.doi.org/10.1143/jjap.41.l540}, DOI={10.1143/jjap.41.l540}, number={Part 2, No. 5B}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Higashiwaki, Masataka and Matsui, Toshiaki}, year={2002}, month=may, pages={L540–L542} }

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