DOI: 10.1143/jjap.40.l1207. Low Temperature Growth of Polycrystalline Silicon Films by Hot-Wire Chemical Vapor Deposition Using SiCl<sub>4</sub>/H<sub>2</sub> Gases

Low Temperature Growth of Polycrystalline Silicon Films by Hot-Wire Chemical Vapor Deposition Using SiCl4/H2 Gases

10.1143/jjap.40.l1207

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Low-temperature growth of polycrystalline silicon films using SiCl4/H2 in a hot-wire chemical vapor deposition (HWCVD) reactor is reported here. Slightly (100) oriented polycrystalline silicon film with a crystalline fraction of 97% has been deposited at a hot wire temperature of 1900°C and a substrate temperature of 320°C. The average grain size of the film is 0.1 µm with a thickness of 0.5 µm. (110) Preferentially orientated silicon film with a 97% crystalline fraction is also deposited at a hot wire temperature of 1700°C and a substrate temperature of 290°C. A nanocrystalline film with a 57% crystalline fraction is formed when the substrate temperature is lowered to 150°C. The roles of Cl and H radicals in the formation of crystalline silicon films are discussed.

Bibliography

Wong, T.-C., & Wu, J.-J. (2001). Low Temperature Growth of Polycrystalline Silicon Films by Hot-Wire Chemical Vapor Deposition Using SiCl4/H2 Gases. Japanese Journal of Applied Physics, 40(11B), L1207.

Authors 2

Te-Chi Wong (first)
Jih-Jen Wu (additional)

References 15 Referenced 7

10.1143/JJAP.31.4555 / Jpn. J. Appl. Phys. (1992)
10.1143/JJAP.26.L951 / Jpn. J. Appl. Phys. (1987)
10.1063/1.349732 / J. Appl. Phys. (1991)
10.1143/JJAP.30.L779 / Jpn. J. Appl. Phys. (1991)
{'year': '2000', 'key': ''} (2000)
10.1143/JJAP.38.L554 / Jpn. J. Appl. Phys. (1999)
10.1143/JJAP.40.L215 / Jpn. J. Appl. Phys. (2001)
10.1143/JJAP.37.3175 / Jpn. J. Appl. Phys. (1998)
10.1143/JJAP.38.L24 / Jpn. J. Appl. Phys. (1999)
10.1143/JJAP.24.161 / Jpn. J. Appl. Phys. (1985)
10.1063/1.93133 / Appl. Phys. Lett. (1982)
{'year': '1991', 'key': ''} (1991)
{'year': '1995', 'key': ''} (1995)
10.1063/1.125373 / Appl. Phys. Lett. (1999)
10.1007/978-1-4615-5577-3 (1998)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 1, 2002, 4:34 p.m.)
Deposited	2 years, 8 months ago (Dec. 19, 2022, 12:30 p.m.)
Indexed	6 months ago (Feb. 21, 2025, 5:33 a.m.)
Issued	23 years, 9 months ago (Nov. 1, 2001)
Published	23 years, 9 months ago (Nov. 1, 2001)
Published Print	23 years, 9 months ago (Nov. 1, 2001)

Funders 0

None

BibTeX

@article{Wong_2001, title={Low Temperature Growth of Polycrystalline Silicon Films by Hot-Wire Chemical Vapor Deposition Using SiCl4/H2 Gases}, volume={40}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.40.l1207}, DOI={10.1143/jjap.40.l1207}, number={11B}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Wong, Te-Chi and Wu, Jih-Jen}, year={2001}, month=nov, pages={L1207} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        2,
        21
      ]
    ],
    "date-time": "2025-02-21T10:33:12Z",
    "timestamp": 1740133992422,
    "version": "3.37.3"
  },
  "reference-count": 15,
  "publisher": "IOP Publishing",
  "issue": "11B",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2001,
            11,
            1
          ]
        ],
        "date-time": "2001-11-01T00:00:00Z",
        "timestamp": 1004572800000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "https://iopscience.iop.org/page/copyright"
    },
    {
      "start": {
        "date-parts": [
          [
            2001,
            11,
            1
          ]
        ],
        "date-time": "2001-11-01T00:00:00Z",
        "timestamp": 1004572800000
      },
      "content-version": "tdm",
      "delay-in-days": 0,
      "URL": "https://iopscience.iop.org/info/page/text-and-data-mining"
    }
  ],
  "content-domain": {
    "domain": [
      "iopscience.iop.org"
    ],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        2001,
        11,
        1
      ]
    ]
  },
  "abstract": "<jats:p> \n  Low-temperature growth of polycrystalline silicon films using SiCl<jats:sub>4</jats:sub>/H<jats:sub>2</jats:sub> in a hot-wire chemical vapor deposition (HWCVD) reactor is reported here. Slightly (100) oriented polycrystalline silicon film with a crystalline fraction of 97% has been deposited at a hot wire temperature of 1900\u00b0C and a substrate temperature of 320\u00b0C. The average grain size of the film is 0.1 \u00b5m with a thickness of 0.5 \u00b5m. (110) Preferentially orientated silicon film with a 97% crystalline fraction is also deposited at a hot wire temperature of 1700\u00b0C and a substrate temperature of 290\u00b0C. A nanocrystalline film with a 57% crystalline fraction is formed when the substrate temperature is lowered to 150\u00b0C. The roles of Cl and H radicals in the formation of crystalline silicon films are discussed. \n  </jats:p>",
  "DOI": "10.1143/jjap.40.l1207",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        10,
        1
      ]
    ],
    "date-time": "2002-10-01T20:34:55Z",
    "timestamp": 1033504495000
  },
  "page": "L1207",
  "update-policy": "https://doi.org/10.1088/crossmark-policy",
  "source": "Crossref",
  "is-referenced-by-count": 7,
  "title": "Low Temperature Growth of Polycrystalline Silicon Films by Hot-Wire   Chemical Vapor Deposition Using SiCl<sub>4</sub>/H<sub>2</sub> Gases",
  "prefix": "10.35848",
  "volume": "40",
  "author": [
    {
      "given": "Te-Chi",
      "family": "Wong",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "Jih-Jen",
      "family": "Wu",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "266",
  "reference": [
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "4555",
      "DOI": "10.1143/JJAP.31.4555",
      "volume": "31",
      "year": "1992",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L951",
      "DOI": "10.1143/JJAP.26.L951",
      "volume": "26",
      "year": "1987",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "7374",
      "DOI": "10.1063/1.349732",
      "volume": "70",
      "year": "1991",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L779",
      "DOI": "10.1143/JJAP.30.L779",
      "volume": "30",
      "year": "1991",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "year": "2000",
      "key": ""
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L554",
      "DOI": "10.1143/JJAP.38.L554",
      "volume": "38",
      "year": "1999",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L215",
      "DOI": "10.1143/JJAP.40.L215",
      "volume": "40",
      "year": "2001",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "3175",
      "DOI": "10.1143/JJAP.37.3175",
      "volume": "37",
      "year": "1998",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L24",
      "DOI": "10.1143/JJAP.38.L24",
      "volume": "38",
      "year": "1999",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "161",
      "DOI": "10.1143/JJAP.24.161",
      "volume": "24",
      "year": "1985",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "534",
      "DOI": "10.1063/1.93133",
      "volume": "40",
      "year": "1982",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "year": "1991",
      "key": ""
    },
    {
      "year": "1995",
      "key": ""
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "3515",
      "DOI": "10.1063/1.125373",
      "volume": "75",
      "year": "1999",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "year": "1998",
      "key": "",
      "doi-asserted-by": "publisher",
      "DOI": "10.1007/978-1-4615-5577-3"
    }
  ],
  "container-title": "Japanese Journal of Applied Physics",
  "original-title": [],
  "link": [
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.40.L1207",
      "content-type": "text/html",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.40.L1207/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.40.L1207/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.40.L1207/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2022,
        12,
        19
      ]
    ],
    "date-time": "2022-12-19T17:30:13Z",
    "timestamp": 1671471013000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.40.L1207"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2001,
        11,
        1
      ]
    ]
  },
  "references-count": 15,
  "journal-issue": {
    "issue": "11B",
    "published-print": {
      "date-parts": [
        [
          2001,
          11,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1143/JJAP.40.L1207",
  "relation": {},
  "ISSN": [
    "0021-4922",
    "1347-4065"
  ],
  "subject": [],
  "container-title-short": "Jpn. J. Appl. Phys.",
  "published": {
    "date-parts": [
      [
        2001,
        11,
        1
      ]
    ]
  },
  "assertion": [
    {
      "value": "Low Temperature Growth of Polycrystalline Silicon Films by Hot-Wire   Chemical Vapor Deposition Using SiCl4/H2 Gases",
      "name": "article_title",
      "label": "Article Title"
    },
    {
      "value": "Japanese Journal of Applied Physics",
      "name": "journal_title",
      "label": "Journal Title"
    },
    {
      "value": "paper",
      "name": "article_type",
      "label": "Article Type"
    },
    {
      "value": "Copyright (c) 2001 The Japan Society of Applied Physics",
      "name": "copyright_information",
      "label": "Copyright Information"
    },
    {
      "value": "2001-08-03",
      "name": "date_received",
      "label": "Date Received",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "value": "2001-09-28",
      "name": "date_accepted",
      "label": "Date Accepted",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "name": "date_epub",
      "label": "Online publication date",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    }
  ]
}