DOI: 10.1143/jjap.40.4593. Characterization of Tantalum Pentoxide Dielectric Films Grown by Low-Pressure and Plasma-Enhanced Chemical Vapor Deposition

Characterization of Tantalum Pentoxide Dielectric Films Grown by Low-Pressure and Plasma-Enhanced Chemical Vapor Deposition

10.1143/jjap.40.4593

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

The material properties as well as the electrical behavior of tantalum pentoxide (Ta2O5) thin films prepared by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD), in the same reactor, were studied. Ta2O5 films were grown on Si and Pt substrates by reacting pentaethoxy tantalum [Ta(OC2H5)5] with oxygen and were annealed in an oxygen furnace at 700°C or oxygen plasma at 350°C. Scanning electron microscopy (SEM), secondary ion mass spectroscopy (SIMS), Auger electron spectroscopy (AES), capacitance–voltage (C–V) and current–voltage (I–V) measurements were employed to characterize the Ta2O5 films before and after annealing. Compared to the LPCVD Ta2O5 film, the PECVD Ta2O5 film deposited at an rf power of 80 W exhibited a denser structure and better dielectric characteristics. Oxygen plasma annealing further densified the Ta2O5 films and improved their electrical performance on either Si or Pt substrate, without deteriorating the substrate materials.

Bibliography

Sue Chen, Y.-S. L. (2001). Characterization of Tantalum Pentoxide Dielectric Films Grown by Low-Pressure and Plasma-Enhanced Chemical Vapor Deposition. Japanese Journal of Applied Physics, 40(7R), 4593.

Authors 1

Yi-Sheng Lai Sue Chen (first)

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Dates

Type	When
Created	22 years, 11 months ago (Oct. 1, 2002, 4:34 p.m.)
Deposited	2 years, 8 months ago (Dec. 19, 2022, 12:25 p.m.)
Indexed	4 months, 4 weeks ago (April 4, 2025, 10:03 a.m.)
Issued	24 years, 2 months ago (July 1, 2001)
Published	24 years, 2 months ago (July 1, 2001)
Published Print	24 years, 2 months ago (July 1, 2001)

Funders 0

None

BibTeX

@article{Sue_Chen_2001, title={Characterization of Tantalum Pentoxide Dielectric Films Grown by Low-Pressure and Plasma-Enhanced Chemical Vapor Deposition}, volume={40}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.40.4593}, DOI={10.1143/jjap.40.4593}, number={7R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Sue Chen, Yi-Sheng Lai}, year={2001}, month=jul, pages={4593} }

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