DOI: 10.1143/jjap.40.2923. Analysis and Improvement of Retention Time of Memorized State of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory

Analysis and Improvement of Retention Time of Memorized State of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory

10.1143/jjap.40.2923

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Retention characteristics of metal-ferroelectric-insulator-semiconductor (MFIS) structures have been studied theoretically by considering effects of charge injections derived from the difference between leakage current densities in the ferroelectric and insulator layers. The calculated curves for time-dependent capacitance have shown good agreements with experimental results. The numerical results for the MFIS structure have indicated that excess current over a certain value through the ferroelectric and the insulator layers causes the retention time to rapidly degrade. An idea of inserting an insulator film between the metal and the ferroelectric layers in an MFIS has also been examined in order to cut down the currents through the ferroelectric layer. The calculations based on our model have found this metal-insulator-ferroelectric-insulator-semiconductor (M-I-FIS) structure to exhibit much longer retention time than the conventional MFIS.

Bibliography

Mitsue Takahashi, M. T., Hideki Sugiyama, H. S., Toshiyuki Nakaiso, T. N., Kazushi Kodama, K. K., Minoru Noda, M. N., & Masanori Okuyama, M. O. (2001). Analysis and Improvement of Retention Time of Memorized State of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory. Japanese Journal of Applied Physics, 40(4S), 2923.

Authors 6

Mitsue Takahashi Mitsue Takahashi (first)
Hideki Sugiyama Hideki Sugiyama (additional)
Toshiyuki Nakaiso Toshiyuki Nakaiso (additional)
Kazushi Kodama Kazushi Kodama (additional)
Minoru Noda Minoru Noda (additional)
Masanori Okuyama Masanori Okuyama (additional)

References 11 Referenced 47

10.1063/1.124446 / Appl. Phys. Lett. (1999)
10.1063/1.124771 / Appl. Phys. Lett. (1999)
10.1143/JJAP.36.5912 / Jpn. J. Appl. Phys. (1997)
{'key': ''}
{'journal-title': 'J. Integr. Ferroelectr. (2000).', 'key': ''} / J. Integr. Ferroelectr. (2000).
{'year': '1981', 'key': ''} (1981)
10.1063/1.351910 / J. Appl. Phys. (1992)
10.1063/1.123476 / Appl. Phys. Lett. (1999)
10.1143/JJAP.38.2272 / Jpn. J. Appl. Phys. (1999)
{'key': ''}
10.1007/978-1-4684-1752-4 (1969)

Dates

Type	When
Created	22 years, 11 months ago (Oct. 1, 2002, 4:30 p.m.)
Deposited	2 years, 8 months ago (Dec. 19, 2022, 11:26 a.m.)
Indexed	4 months, 1 week ago (April 19, 2025, 1:07 a.m.)
Issued	24 years, 5 months ago (April 1, 2001)
Published	24 years, 5 months ago (April 1, 2001)
Published Print	24 years, 5 months ago (April 1, 2001)

Funders 0

None

BibTeX

@article{Mitsue_Takahashi_2001, title={Analysis and Improvement of Retention Time of Memorized State of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory}, volume={40}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.40.2923}, DOI={10.1143/jjap.40.2923}, number={4S}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Mitsue Takahashi, Mitsue Takahashi and Hideki Sugiyama, Hideki Sugiyama and Toshiyuki Nakaiso, Toshiyuki Nakaiso and Kazushi Kodama, Kazushi Kodama and Minoru Noda, Minoru Noda and Masanori Okuyama, Masanori Okuyama}, year={2001}, month=apr, pages={2923} }

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