DOI: 10.1143/jjap.39.l202. Characterization of Polarity of Wurtzite GaN Film Grown by Molecular Beam Epitaxy Using NH<sub>3</sub>

Characterization of Polarity of Wurtzite GaN Film Grown by Molecular Beam Epitaxy Using NH3

10.1143/jjap.39.l202

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Effects of the initial nitridation of a sapphire(0001) substrate by NH3 on the polarity of GaN{0001} film have been investigated by coaxial impact collision ion scattering spectroscopy. The polarity of ammonia-molecular beam epitaxial (MBE) film grown on the substrate nitrided using NH3 is assigned as (0001). The effect of the initial nitridation of the substrate by NH3 is found to be contrary to that by nitrogen plasma, where the GaN film grown on the nitrided substrate shows the polarity of (0001). The polarity of GaN film grown by rf plasma-assisted MBE on the substrate which is nitrided using NH3 is also (0001). These findings suggest the possibility of polarity control of the grown GaN film by choosing the N source for initial nitridation of the substrate.

Bibliography

Sonoda, S., Shimizu, S., Shen, X.-Q., Hara, S., & Okumura, H. (2000). Characterization of Polarity of Wurtzite GaN Film Grown by Molecular Beam Epitaxy Using NH3. Japanese Journal of Applied Physics, 39(3A), L202.

Authors 5

Saki Sonoda (first)
Saburo Shimizu (additional)
Xu-Qiang Shen (additional)
Shiro Hara (additional)
Hajime Okumura (additional)

References 19 Referenced 25

10.1143/JJAP.30.L1705 / Jpn. J. Appl. Phys. (1991)
{'key': ''}
10.1063/1.115687 / Appl. Phys. Lett. (1996)
10.1063/1.355070 / J. Appl. Phys. (1993)
10.1063/1.357133 / J. Appl. Phys. (1994)
10.1063/1.117504 / Appl. Phys. Lett. (1996)
10.1063/1.118052 / Appl. Phys. Lett. (1996)
10.1063/1.366749 / J. Appl. Phys. (1998)
10.1063/1.124478 / Appl. Phys. Lett. (1999)
{'year': '1999', 'key': ''} (1999)
10.1063/1.117648 / Appl. Phys. Lett. (1996)
10.1063/1.121293 / Appl. Phys. Lett. (1998)
10.1063/1.123199 / Appl. Phys. Lett. (1999)
{'year': '1999', 'key': ''} (1999)
10.1143/JJAP.37.L703 / Jpn. J. Appl. Phys. (1998)
10.1143/JJAP.38.L1219 / Jpn. J. Appl. Phys. (1999)
10.1143/JJAP.39.L73 / Jpn. J. Appl. Phys. (2000)
10.1016/S0022-0248(99)00571-0 / J. Cryst. Growth. (2000)
{'key': ''}

Dates

Type	When
Created	22 years, 11 months ago (Oct. 1, 2002, 7:08 p.m.)
Deposited	2 years, 8 months ago (Dec. 19, 2022, 1:02 p.m.)
Indexed	6 months, 2 weeks ago (Feb. 21, 2025, 5:34 a.m.)
Issued	25 years, 6 months ago (March 1, 2000)
Published	25 years, 6 months ago (March 1, 2000)
Published Print	25 years, 6 months ago (March 1, 2000)

Funders 0

None

BibTeX

@article{Sonoda_2000, title={Characterization of Polarity of Wurtzite GaN Film Grown by Molecular Beam Epitaxy Using NH3}, volume={39}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.39.l202}, DOI={10.1143/jjap.39.l202}, number={3A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Sonoda, Saki and Shimizu, Saburo and Shen, Xu-Qiang and Hara, Shiro and Okumura, Hajime}, year={2000}, month=mar, pages={L202} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        2,
        21
      ]
    ],
    "date-time": "2025-02-21T10:34:17Z",
    "timestamp": 1740134057140,
    "version": "3.37.3"
  },
  "reference-count": 19,
  "publisher": "IOP Publishing",
  "issue": "3A",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2000,
            3,
            1
          ]
        ],
        "date-time": "2000-03-01T00:00:00Z",
        "timestamp": 951868800000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "https://iopscience.iop.org/page/copyright"
    },
    {
      "start": {
        "date-parts": [
          [
            2000,
            3,
            1
          ]
        ],
        "date-time": "2000-03-01T00:00:00Z",
        "timestamp": 951868800000
      },
      "content-version": "tdm",
      "delay-in-days": 0,
      "URL": "https://iopscience.iop.org/info/page/text-and-data-mining"
    }
  ],
  "content-domain": {
    "domain": [
      "iopscience.iop.org"
    ],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        2000,
        3,
        1
      ]
    ]
  },
  "abstract": "<jats:p> \n  Effects of the initial nitridation of a sapphire(0001) substrate by NH<jats:sub>3</jats:sub> on \n  the polarity of GaN{0001} film have been investigated by coaxial impact collision ion \n  scattering spectroscopy. The polarity of ammonia-molecular beam epitaxial (MBE) film \n  grown on the substrate nitrided using NH<jats:sub>3</jats:sub> is assigned as (0001). The effect of the \n  initial nitridation of the substrate by NH<jats:sub>3</jats:sub> is found to be contrary to that by \n  nitrogen plasma, where the GaN film grown on the nitrided substrate shows the polarity \n  of (0001). The polarity of GaN film grown by rf plasma-assisted MBE on the \n  substrate which is nitrided using NH<jats:sub>3</jats:sub> is also (0001). These findings suggest the \n  possibility of polarity control of the grown GaN film by choosing the N source for \n  initial nitridation of the substrate. \n  </jats:p>",
  "DOI": "10.1143/jjap.39.l202",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        10,
        1
      ]
    ],
    "date-time": "2002-10-01T23:08:06Z",
    "timestamp": 1033513686000
  },
  "page": "L202",
  "update-policy": "https://doi.org/10.1088/crossmark-policy",
  "source": "Crossref",
  "is-referenced-by-count": 25,
  "title": "Characterization of Polarity of Wurtzite GaN Film Grown  by Molecular Beam Epitaxy Using NH<sub>3</sub>",
  "prefix": "10.35848",
  "volume": "39",
  "author": [
    {
      "given": "Saki",
      "family": "Sonoda",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "Saburo",
      "family": "Shimizu",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Xu-Qiang",
      "family": "Shen",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Shiro",
      "family": "Hara",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Hajime",
      "family": "Okumura",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "266",
  "reference": [
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L1705",
      "DOI": "10.1143/JJAP.30.L1705",
      "volume": "30",
      "year": "1991",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": ""
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "1525",
      "DOI": "10.1063/1.115687",
      "volume": "68",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "6734",
      "DOI": "10.1063/1.355070",
      "volume": "74",
      "year": "1993",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "236",
      "DOI": "10.1063/1.357133",
      "volume": "76",
      "year": "1994",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "2480",
      "DOI": "10.1063/1.117504",
      "volume": "69",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "337",
      "DOI": "10.1063/1.118052",
      "volume": "69",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "764",
      "DOI": "10.1063/1.366749",
      "volume": "83",
      "year": "1998",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "674",
      "DOI": "10.1063/1.124478",
      "volume": "75",
      "year": "1999",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "year": "1999",
      "key": ""
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "2394",
      "DOI": "10.1063/1.117648",
      "volume": "69",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "2114",
      "DOI": "10.1063/1.121293",
      "volume": "72",
      "year": "1998",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "3616",
      "DOI": "10.1063/1.123199",
      "volume": "74",
      "year": "1999",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "year": "1999",
      "key": ""
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L703",
      "DOI": "10.1143/JJAP.37.L703",
      "volume": "37",
      "year": "1998",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L1219",
      "DOI": "10.1143/JJAP.38.L1219",
      "volume": "38",
      "year": "1999",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "L73",
      "DOI": "10.1143/JJAP.39.L73",
      "volume": "39",
      "year": "2000",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "",
      "doi-asserted-by": "publisher",
      "first-page": "364",
      "DOI": "10.1016/S0022-0248(99)00571-0",
      "volume": "209",
      "year": "2000",
      "journal-title": "J. Cryst. Growth."
    },
    {
      "key": ""
    }
  ],
  "container-title": "Japanese Journal of Applied Physics",
  "original-title": [],
  "link": [
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.39.L202",
      "content-type": "text/html",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.39.L202/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.39.L202/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.39.L202/pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2022,
        12,
        19
      ]
    ],
    "date-time": "2022-12-19T18:02:42Z",
    "timestamp": 1671472962000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://iopscience.iop.org/article/10.1143/JJAP.39.L202"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2000,
        3,
        1
      ]
    ]
  },
  "references-count": 19,
  "journal-issue": {
    "issue": "3A",
    "published-print": {
      "date-parts": [
        [
          2000,
          3,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1143/JJAP.39.L202",
  "relation": {},
  "ISSN": [
    "0021-4922",
    "1347-4065"
  ],
  "subject": [],
  "container-title-short": "Jpn. J. Appl. Phys.",
  "published": {
    "date-parts": [
      [
        2000,
        3,
        1
      ]
    ]
  },
  "assertion": [
    {
      "value": "Characterization of Polarity of Wurtzite GaN Film Grown  by Molecular Beam Epitaxy Using NH3",
      "name": "article_title",
      "label": "Article Title"
    },
    {
      "value": "Japanese Journal of Applied Physics",
      "name": "journal_title",
      "label": "Journal Title"
    },
    {
      "value": "paper",
      "name": "article_type",
      "label": "Article Type"
    },
    {
      "value": "Copyright (c) 2000 The Japan Society of Applied Physics",
      "name": "copyright_information",
      "label": "Copyright Information"
    },
    {
      "value": "1999-12-22",
      "name": "date_received",
      "label": "Date Received",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "value": "2000-01-26",
      "name": "date_accepted",
      "label": "Date Accepted",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    },
    {
      "name": "date_epub",
      "label": "Online publication date",
      "group": {
        "name": "publication_dates",
        "label": "Publication dates"
      }
    }
  ]
}