DOI: 10.1143/jjap.39.6157. Submicron Nonvolatile Memory Cell Based on Reversible Phase Transition in Chalcogenide Glasses

Submicron Nonvolatile Memory Cell Based on Reversible Phase Transition in Chalcogenide Glasses

10.1143/jjap.39.6157

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Electrically rewritable nonvolatile memories using chalcogenide semiconductors were studied. The memory cell size was changed from 0.3 to 1.5 µmφ using a focused ion beam. This material can be used for nonvolatile random access memory. Reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited to store bits of information. The currents for write/erase were decreased with reducing memory cell size. In the memory cell of 0.6 µmφ, more than 104 repetition cycles of the phase transition were attained by the electric pulses. The voltages for the crystallization and amorphization processes were 2 V and 2.2 V, respectively.

Bibliography

Nakayama, K., Kojima, K., Hayakawa, F., Imai, Y., Kitagawa, A., & Suzuki, M. (2000). Submicron Nonvolatile Memory Cell Based on Reversible Phase Transition in Chalcogenide Glasses. Japanese Journal of Applied Physics, 39(11R), 6157.

Authors 6

Kazuya Nakayama (first)
Kazuhiko Kojima (additional)
Fumihito Hayakawa (additional)
Yutaka Imai (additional)
Akio Kitagawa (additional)
Masakuni Suzuki (additional)

References 13 Referenced 56

10.1103/PhysRevLett.21.1450 / Phys. Rev. Lett. (1968)
10.1143/JJAP.28.1013 / Jpn. J. Appl. Phys. (1989)
10.1143/JJAP.32.564 / Jpn. J. Appl. Phys. (1993)
10.1063/1.1653653 / Appl. Phys. Lett. (1971)
10.1117/12.952739 / Proc. SPIE (1989)
10.1007/BF02655632 / J. Electron Mater. (1979)
{'key': '', 'first-page': '56', 'volume': '49', 'year': '1970', 'journal-title': 'Electronics'} / Electronics (1970)
10.1109/T-ED.1973.17616 / IEEE Trans. Electron Devices (1973)
{'year': '1991', 'key': ''} (1991)
10.1143/JJAP.27.1380 / Jpn. J. Appl. Phys. (1988)
10.1063/1.328036 / J. Appl. Phys. (1980)
10.1007/978-1-4757-0851-6 (1981)
{'key': '', 'first-page': '1144', 'volume': '68', 'year': '1999', 'journal-title': 'Oyo Buturi'} / Oyo Buturi (1999)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 1, 2002, 4:30 p.m.)
Deposited	2 years, 8 months ago (Dec. 14, 2022, 12:57 p.m.)
Indexed	6 months ago (Feb. 21, 2025, 5:32 a.m.)
Issued	24 years, 9 months ago (Nov. 1, 2000)
Published	24 years, 9 months ago (Nov. 1, 2000)
Published Print	24 years, 9 months ago (Nov. 1, 2000)

Funders 0

None

BibTeX

@article{Nakayama_2000, title={Submicron Nonvolatile Memory Cell Based on Reversible Phase Transition in Chalcogenide Glasses}, volume={39}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.39.6157}, DOI={10.1143/jjap.39.6157}, number={11R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Nakayama, Kazuya and Kojima, Kazuhiko and Hayakawa, Fumihito and Imai, Yutaka and Kitagawa, Akio and Suzuki, Masakuni}, year={2000}, month=nov, pages={6157} }

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