DOI: 10.1143/jjap.39.2125. Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor (MFIS)- and Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Ferroelectric SrBi2Ta2O9 Film and SrTa2O6/SiON Buffer Layer

Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor (MFIS)- and Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Ferroelectric SrBi2Ta2O9 Film and SrTa2O6/SiON Buffer Layer

10.1143/jjap.39.2125

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Nonvolatile memory operations of p-channel metal-ferroelctric-insulator-semiconductor (MFIS)- and metal-ferroelectric-metal-insulator-semiconductor (MFMIS)-FETs using ferroelectric SrBi2Ta2O9 (SBT) film and SrTa2O6(STA)/SiON stacked buffer layer have been demonstrated. It is determinded that the Al/STA/SiON/Si structure with a SiO2 equivalent thickness of 3.7 nm has low leakage current of 10-8 A/cm2. The memory window of 1.1 V is obtained for Pt/SBT/STA/SiON MFIS-FETs, whereas Pt/SBT/Pt/STA/SiON/Si MFMIS-FETs have memory windows as large as 3.0 V when the area ratio S M/S F is 3.8 or 5.9. Furthermore, it is also demonstrated that by reducing the metal-ferroelectric-metal (MFM) capacitor area, significant improvement of data retention characteristics can be achieved. The drain current on-off ratio remains at more than three orders of magnitude even after an elapse of 10 h.

Bibliography

Tokumitsu, E., Fujii, G., & Ishiwara, H. (2000). Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor (MFIS)- and Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Ferroelectric SrBi2Ta2O9 Film and SrTa2O6/SiON Buffer Layer. Japanese Journal of Applied Physics, 39(4S), 2125.

Authors 3

Eisuke Tokumitsu (first)
Gen Fujii (additional)
Hiroshi Ishiwara (additional)

References 20 Referenced 80

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Dates

Type	When
Created	22 years, 10 months ago (Oct. 1, 2002, 7:08 p.m.)
Deposited	2 years, 8 months ago (Dec. 14, 2022, 12:34 p.m.)
Indexed	2 weeks ago (Aug. 6, 2025, 9:44 a.m.)
Issued	25 years, 4 months ago (April 1, 2000)
Published	25 years, 4 months ago (April 1, 2000)
Published Print	25 years, 4 months ago (April 1, 2000)

Funders 0

None

BibTeX

@article{Tokumitsu_2000, title={Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor (MFIS)- and Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Ferroelectric SrBi2Ta2O9 Film and SrTa2O6/SiON Buffer Layer}, volume={39}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.39.2125}, DOI={10.1143/jjap.39.2125}, number={4S}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Tokumitsu, Eisuke and Fujii, Gen and Ishiwara, Hiroshi}, year={2000}, month=apr, pages={2125} }

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