DOI: 10.1143/jjap.38.l996. Paramorphic Growth: A New Approach in Mismatched Heteroepitaxy to Prepare Fully Relaxed Materials

Paramorphic Growth: A New Approach in Mismatched Heteroepitaxy to Prepare Fully Relaxed Materials

10.1143/jjap.38.l996

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

We propose paramorphic growth as a new approach for growing thick, ideally relaxed, epitaxial layers on mismatched substrates. First, a thin seed layer, originally grown pseudomorphically strained on a mismatched substrate coated with a sacrificial layer, is separated by chemical etching from its original substrate and subsequently deposited on the final substrate after being elastically relaxed. Consequently, thick layers, lattice matched to the cubic-relaxed seed layer, can be grown epitaxially without the introduction of any structural defects. The validity of this approach is demonstrated by growing fully relaxed In0.65Ga0.35As thick layers on 300×300 µm2 platforms deposited on an InP substrate, using molecular beam epitaxy.

Bibliography

Damlencourt, J.-F., Leclercq, J.-L., Gendry, M., Garrigues, M., Aberkane, N., & Hollinger, G. (1999). Paramorphic Growth: A New Approach in Mismatched Heteroepitaxy to Prepare Fully Relaxed Materials. Japanese Journal of Applied Physics, 38(9A), L996.

Authors 6

Jean-François Damlencourt (first)
Jean-Louis Leclercq (additional)
Michel Gendry (additional)
Michel Garrigues (additional)
Nabil Aberkane (additional)
Guy Hollinger (additional)

References 21 Referenced 6

10.1016/0022-0248(91)90992-E / J. Cryst. Growth (1991)
10.1080/00018739600101477 / Adv. Phys. (1995)
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10.1143/JJAP.30.L423 / Jpn. J. Appl. Phys. (1991)
10.1088/0268-1242/8/6/021 / Semicond. Sci. Technol. (1993)
{'key': '', 'first-page': '6', 'volume': '249', 'year': '1996', 'journal-title': 'J. Micromec. & Microeng.'} / J. Micromec. & Microeng. (1996)
10.1063/1.114053 / Appl. Phys. Lett. (1995)
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{'key': ''}
{'year': '1995', 'key': ''} (1995)

Dates

Type	When
Created	22 years, 11 months ago (Oct. 1, 2002, 4:51 p.m.)
Deposited	2 years, 8 months ago (Dec. 14, 2022, 12:52 p.m.)
Indexed	6 months, 1 week ago (Feb. 21, 2025, 5:33 a.m.)
Issued	26 years ago (Sept. 1, 1999)
Published	26 years ago (Sept. 1, 1999)
Published Print	26 years ago (Sept. 1, 1999)

Funders 0

None

BibTeX

@article{Damlencourt_1999, title={Paramorphic Growth: A New Approach in Mismatched Heteroepitaxy to Prepare Fully Relaxed Materials}, volume={38}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.38.l996}, DOI={10.1143/jjap.38.l996}, number={9A}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Damlencourt, Jean-François and Leclercq, Jean-Louis and Gendry, Michel and Garrigues, Michel and Aberkane, Nabil and Hollinger, Guy}, year={1999}, month=sep, pages={L996} }

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