Abstract
We have investigated the Raman spectra of thermally and laser annealed Ge2Sb2Te5 films. The thermally crystallized film included few amorphous Te–Te bonds, however a large number of the Te–Te bonds remained in the laser annealed film. It was suggested that the Te–Te amorphous bonds were one of the main reasons leading to the erasability during the first few cycles of overwriting.
References
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Dates
Type | When |
---|---|
Created | 22 years, 10 months ago (Oct. 1, 2002, 6:51 p.m.) |
Deposited | 2 years, 8 months ago (Dec. 14, 2022, 12:49 p.m.) |
Indexed | 3 months, 1 week ago (May 9, 2025, 5:07 a.m.) |
Issued | 26 years, 5 months ago (March 1, 1999) |
Published | 26 years, 5 months ago (March 1, 1999) |
Published Print | 26 years, 5 months ago (March 1, 1999) |
@article{Tominaga_1999, title={Study of the Crystallization of GeSbTe Films by Raman Spectroscopy}, volume={38}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.38.l322}, DOI={10.1143/jjap.38.l322}, number={3B}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Tominaga, Junji and Atoda, Nobufumi}, year={1999}, month=mar, pages={L322} }