DOI: 10.1143/jjap.38.7148. Single-Crystalline CoSi<sub>2</sub> Layer Formation by Focused Ion Beam Synthesis

Single-Crystalline CoSi2 Layer Formation by Focused Ion Beam Synthesis

10.1143/jjap.38.7148

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

The effects of accumulated radiation damage which arise from the excessive current density employed during focused ion beam implantation are described. The dwell time during beam scanning significantly influences the focused ion beam synthesis of CoSi2 in Si. At sufficiently low accumulated damage, single-crystalline CoSi2 layers are obtained, similarly to conventional ion implantation. A procedure is described which enables the reduction of radiation damage induced by a focused ion beam to the level of conventional ion implantation. This is of importance for the formation of single-crystalline CoSi2 layers.

Bibliography

Hausmann, S., Bischoff, L., Teichert, J., Voelskow, M., & MÃ¶ller, W. (1999). Single-Crystalline CoSi2 Layer Formation by Focused Ion Beam Synthesis. Japanese Journal of Applied Physics, 38(12S), 7148.

Authors 5

Stephan Hausmann (first)
Lothar Bischoff (additional)
Jochen Teichert (additional)
Matthias Voelskow (additional)
Wolfhard Möller (additional)

References 16 Referenced 9

10.1063/1.97830 / Appl. Phys. Lett. (1987)
10.1016/0168-583X(91)96276-Q / Nucl. Instrum. Methods B (1991)
10.1063/1.120384 / Appl. Phys. Lett. (1997)
10.1063/1.121110 / Appl. Phys. Lett. (1998)
10.1016/0167-9317(91)90113-R / Microelectron. Eng. (1991)
10.1088/0022-3727/27/2/038 / J. Phys. D: Appl. Phys. (1994)
10.1063/1.108965 / Appl. Phys. Lett. (1993)
10.1016/S0042-207X(98)00171-7 / Vacuum (1998)
10.1016/0168-583X(91)95299-S / Nucl. Instrum. Methods B (1991)
{'key': '', 'first-page': '334', 'volume': '9', 'year': '1985', 'journal-title': 'Nucl. Instrum. Methods B'} / Nucl. Instrum. Methods B (1985)
{'journal-title': 'J. Appl. Phys.', 'key': ''} / J. Appl. Phys.
10.1016/0040-6090(85)90080-X / Thin Solid Films (1985)
10.1063/1.333000 / J. Appl. Phys. (1984)
10.1016/S0168-583X(98)00533-3 / Nucl. Instrum. Methods B (1999)
10.1016/S0168-583X(98)00786-1 / Nucl. Instrum. Methods B (1999)
10.1080/00337577008235042 / Rad. Eff. (1970)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 1, 2002, 4:51 p.m.)
Deposited	2 years, 8 months ago (Dec. 14, 2022, 11:49 a.m.)
Indexed	6 months ago (Feb. 21, 2025, 5:32 a.m.)
Issued	25 years, 8 months ago (Dec. 1, 1999)
Published	25 years, 8 months ago (Dec. 1, 1999)
Published Print	25 years, 8 months ago (Dec. 1, 1999)

Funders 0

None

BibTeX

@article{Hausmann_1999, title={Single-Crystalline CoSi2 Layer Formation by Focused Ion Beam Synthesis}, volume={38}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.38.7148}, DOI={10.1143/jjap.38.7148}, number={12S}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Hausmann, Stephan and Bischoff, Lothar and Teichert, Jochen and Voelskow, Matthias and Möller, Wolfhard}, year={1999}, month=dec, pages={7148} }

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