DOI: 10.1143/jjap.38.2289. Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi2Ta2O9)/Semiconductor Field Effect Transistor (MFSFET)

Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi2Ta2O9)/Semiconductor Field Effect Transistor (MFSFET)

10.1143/jjap.38.2289

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

The adaptive-learning function was successfully demonstrated in a neuron circuit using a metal/ferroelectric/semiconductor field effect transistor (MFSFET). The polarization direction of the ferroelectric gate film (SrBi2Ta2O9) of MFSFET was gradually reversed by applying a number of input pulses with a sufficiently short duration of 20 ns. Consequently, the S-D (source-drain) resistance of MFSFET was gradually changed, and the output pulse frequency of the neuron circuit was modulated by the number of input pulses.

Bibliography

Sung-Min Yoon, S.-M. Y., Eisuke Tokumitsu, E. T., & Hiroshi Ishiwara, H. I. (1999). Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi2Ta2O9)/Semiconductor Field Effect Transistor (MFSFET). Japanese Journal of Applied Physics, 38(4S), 2289.

Authors 3

Sung-Min Yoon Sung-Min Yoon (first)
Eisuke Tokumitsu Eisuke Tokumitsu (additional)
Hiroshi Ishiwara Hiroshi Ishiwara (additional)

References 11 Referenced 15

10.1143/JJAP.32.442 / Jpn. J. Appl. Phys. (1993)
10.1109/16.239745 / IEEE Trans. Electron Devices (1993)
{'key': '', 'first-page': '101', 'volume': 'E78-C', 'year': '1995', 'journal-title': 'IEICE Trans. Electron.'} / IEICE Trans. Electron. (1995)
10.1109/4.400434 / IEEE J. Solid-State Circuits (1995)
{'key': '', 'first-page': 'S', 'volume': '17', 'year': '1978', 'journal-title': 'Proc. 19th Conf. Solid State Devices, Tokyo, 1997, Jpn. J. Appl. Phys.'} / Proc. 19th Conf. Solid State Devices, Tokyo, 1997, Jpn. J. Appl. Phys. (1978)
10.1080/10584589508012922 / Integrat. Ferroelectr. (1995)
10.1109/55.563315 / IEEE Electron Device Lett. (1997)
10.1557/PROC-493-459 / Mater. Res. Soc. Symp. Proc. (1998)
10.1143/JJAP.37.1110 / Jpn. J. Appl. Phys. (1998)
10.1080/10584589508012262 / Integr. Ferroelectr. (1995)
10.1143/JJAP.34.1061 / Jpn. J. Appl. Phys. (1995)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 1, 2002, 6:51 p.m.)
Deposited	2 years, 8 months ago (Dec. 14, 2022, 12:10 p.m.)
Indexed	2 weeks, 1 day ago (Aug. 6, 2025, 8:20 a.m.)
Issued	26 years, 4 months ago (April 1, 1999)
Published	26 years, 4 months ago (April 1, 1999)
Published Print	26 years, 4 months ago (April 1, 1999)

Funders 0

None

BibTeX

@article{Sung_Min_Yoon_1999, title={Realization of Adaptive Learning Function in a Neuron Circuit Using Metal/Ferroelectric (SrBi2Ta2O9)/Semiconductor Field Effect Transistor (MFSFET)}, volume={38}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.38.2289}, DOI={10.1143/jjap.38.2289}, number={4S}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Sung-Min Yoon, Sung-Min Yoon and Eisuke Tokumitsu, Eisuke Tokumitsu and Hiroshi Ishiwara, Hiroshi Ishiwara}, year={1999}, month=apr, pages={2289} }

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