DOI: 10.1143/jjap.38.2272. Device Physics of Ferroelectric Thin-Film Memories

Device Physics of Ferroelectric Thin-Film Memories

10.1143/jjap.38.2272

Crossref journal-article

IOP Publishing

Japanese Journal of Applied Physics (266)

Abstract

Band structure match-ups are given theoretically from X-ray photoemission spectroscopy (XPS) for the electrode interfaces between platinum electrodes and the ferroelectric thin-film materials commonly used for random access memories (DRAMs and nonvolatile FRAMs): strontium bismuth tantalate (SBT), barium strontium titanate (BST), and lead zirconate titanate (PZT). The results all agree with experimentally measured Schottky barrier heights. The electronegativity constant or S-factor (derivative of Schottky barrier height with respect to electron affinity) is found to be approximately 0.7 for these materials, not the purely ionic value of 1.0. The reduction of a factor of a million in the effective Richardson coefficient is explained. And the paradox of avalanche breakdown but decreasing breakdown fields with increasing temperature is reconciled.

Bibliography

Scott, J. F. (1999). Device Physics of Ferroelectric Thin-Film Memories. Japanese Journal of Applied Physics, 38(4S), 2272.

Authors 1

J. F. Scott (first)

References 13 Referenced 138

10.1063/1.119148 / Appl. Phys. Lett. (1997)
10.1016/0167-9317(95)00155-7 / Microelectron. Eng. (1995)
10.1103/PhysRevLett.22.1433 / Phys. Rev. Lett. (1970)
10.1016/0039-6028(94)90706-4 / Surf. Sci. (1994)
10.1063/1.366045 / J. Appl. Phys. (1997)
{'journal-title': 'Integr. Ferroelecr. (1998).', 'key': ''} / Integr. Ferroelecr. (1998).
10.1103/PhysRevB.17.5044 / Phys. Rev. B (1978)
{'journal-title': 'MRS Proc. (1998).', 'key': ''} / MRS Proc. (1998).
10.1063/1.1728550 / J. Appl. Phys. (1962)
10.1063/1.366595 / J. Appl. Phys. (1998)
10.1063/1.1656519 / J. Appl. Phys. (1968)
10.1080/10584589608013090 / Integr. Ferroelecr. (1996)
10.1103/PhysRevLett.73.2107 / Phys. Rev. Lett. (1994)

Dates

Type	When
Created	22 years, 10 months ago (Oct. 1, 2002, 6:51 p.m.)
Deposited	2 years, 8 months ago (Dec. 14, 2022, 12:09 p.m.)
Indexed	32 minutes ago (Aug. 21, 2025, 4:51 a.m.)
Issued	26 years, 4 months ago (April 1, 1999)
Published	26 years, 4 months ago (April 1, 1999)
Published Print	26 years, 4 months ago (April 1, 1999)

Funders 0

None

BibTeX

@article{Scott_1999, title={Device Physics of Ferroelectric Thin-Film Memories}, volume={38}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.38.2272}, DOI={10.1143/jjap.38.2272}, number={4S}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Scott, J. F.}, year={1999}, month=apr, pages={2272} }

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