Abstract
The effect of annealing on the ferroelectric properties of Pt-based thin film capacitors of Sb-doped lead zirconate titanate [Pt/Pb(Zr0.48Ti0.52)O3/Pt/SiO2/Si] were investigated. Undoped Pb(Zr0.48Ti0.52)O3 (PZT0) and Sb-doped Pb(Zr0.48Ti0.52)O3 (PZST07) thin films were annealed in oxygen atmosphere at 650°C for 30 min. The Sb cation in a PZT thin film before and after annealing was confirmed to be trivalent (Sb3+) by X-ray photoelectron spectroscopy (XPS). The grain sizes of undoped PZT (PZT0) and Sb-doped PZT (PZST07) thin films after annealing are seen to increase. These changes of grain size affect the fatigue properties of PZT thin films. Annealed Sb-doped PZT (PZST07) thin films show good fatigue behavior (fatigue free up to 1011 switching cycles) and a larger P * r-P ∧ r value (31 µ C/cm2) than SrBi2Ta2O9 (SBT) thin films.
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Dates
Type | When |
---|---|
Created | 22 years, 11 months ago (Oct. 1, 2002, 6:51 p.m.) |
Deposited | 2 years, 8 months ago (Dec. 14, 2022, 11:53 a.m.) |
Indexed | 6 months, 2 weeks ago (Feb. 21, 2025, 5:33 a.m.) |
Issued | 26 years, 8 months ago (Jan. 1, 1999) |
Published | 26 years, 8 months ago (Jan. 1, 1999) |
Published Print | 26 years, 8 months ago (Jan. 1, 1999) |
@article{Choi_1999, title={Effect of Annealing on Fatigue Properties of Sb-Doped Lead Zirconate Titanate Thin Films Deposited by DC Reactive Sputtering}, volume={38}, ISSN={1347-4065}, url={http://dx.doi.org/10.1143/jjap.38.122}, DOI={10.1143/jjap.38.122}, number={1R}, journal={Japanese Journal of Applied Physics}, publisher={IOP Publishing}, author={Choi, Won-Youl and Kim, Ho-Gi}, year={1999}, month=jan, pages={122} }